The Raman scattering from various model structures for amorphous silicon is computed. It is shown that the width of the optic peak increases roughly linearly with the rms bond-angle distortion b of the network. The experimentally observed linewidths lead to 7.7°b10.5°. The smaller linewidths (and hence angles) correspond to networks that have been annealed at higher temperatures. These results are consistent with model-building experience which shows that it is impossible to construct fully bonded amorphous networks with b6.6°.
ASJC Scopus subject areas
- Condensed Matter Physics