Structural information from the Raman spectrum of amorphous silicon

D. Beeman, R. Tsu, Michael Thorpe

Research output: Contribution to journalArticle

358 Citations (Scopus)

Abstract

The Raman scattering from various model structures for amorphous silicon is computed. It is shown that the width of the optic peak increases roughly linearly with the rms bond-angle distortion b of the network. The experimentally observed linewidths lead to 7.7°b10.5°. The smaller linewidths (and hence angles) correspond to networks that have been annealed at higher temperatures. These results are consistent with model-building experience which shows that it is impossible to construct fully bonded amorphous networks with b6.6°.

Original languageEnglish (US)
Pages (from-to)874-878
Number of pages5
JournalPhysical Review B
Volume32
Issue number2
DOIs
StatePublished - 1985
Externally publishedYes

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Amorphous silicon
Linewidth
amorphous silicon
Raman scattering
Raman spectra
Model structures
Optics
optics
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Structural information from the Raman spectrum of amorphous silicon. / Beeman, D.; Tsu, R.; Thorpe, Michael.

In: Physical Review B, Vol. 32, No. 2, 1985, p. 874-878.

Research output: Contribution to journalArticle

Beeman, D. ; Tsu, R. ; Thorpe, Michael. / Structural information from the Raman spectrum of amorphous silicon. In: Physical Review B. 1985 ; Vol. 32, No. 2. pp. 874-878.
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