Structural evolution during formation and filling of self-patterned nanoholes on gaas (100) surfaces

K. A. Sablon; Zh M. Wang; G. J. Salamo; Lin Zhou; David Smith

doi:10.1007/s11671-008-9194-5

Structural evolution during formation and filling of self-patterned nanoholes on gaas (100) surfaces

K. A. Sablon, Zh M. Wang, G. J. Salamo, Lin Zhou, David Smith

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Nanohole formation on an AlAs/GaAs superlattice gives insight to both the "drilling" effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets "drill" through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01-1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.

Original language	English (US)
Pages (from-to)	530-533
Number of pages	4
Journal	Nanoscale Research Letters
Volume	3
Issue number	12
DOIs	https://doi.org/10.1007/s11671-008-9194-5
State	Published - Dec 2008

Keywords

Atomic force microscopy
Molecular beam epitaxy
Transmission electron microscopy

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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10.1007/s11671-008-9194-5

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@article{34d30933fe534906849b245228d4046f,

title = "Structural evolution during formation and filling of self-patterned nanoholes on gaas (100) surfaces",

abstract = "Nanohole formation on an AlAs/GaAs superlattice gives insight to both the {"}drilling{"} effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets {"}drill{"} through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01-1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.",

keywords = "Atomic force microscopy, Molecular beam epitaxy, Transmission electron microscopy",

author = "Sablon, {K. A.} and Wang, {Zh M.} and Salamo, {G. J.} and Lin Zhou and David Smith",

note = "Funding Information: Acknowledgments The authors acknowledge the financial support of the NSF through Grant No. DMR-0520550 and the ONR through Grant No. N00014-00-1-0506. We also acknowledge the use of facilities in the John M. Cowley Center for High-Resolution Electron Micrograph at Arizona State University.",

year = "2008",

month = dec,

doi = "10.1007/s11671-008-9194-5",

language = "English (US)",

volume = "3",

pages = "530--533",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

number = "12",

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TY - JOUR

T1 - Structural evolution during formation and filling of self-patterned nanoholes on gaas (100) surfaces

AU - Sablon, K. A.

AU - Wang, Zh M.

AU - Salamo, G. J.

AU - Zhou, Lin

AU - Smith, David

N1 - Funding Information: Acknowledgments The authors acknowledge the financial support of the NSF through Grant No. DMR-0520550 and the ONR through Grant No. N00014-00-1-0506. We also acknowledge the use of facilities in the John M. Cowley Center for High-Resolution Electron Micrograph at Arizona State University.

PY - 2008/12

Y1 - 2008/12

N2 - Nanohole formation on an AlAs/GaAs superlattice gives insight to both the "drilling" effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets "drill" through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01-1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.

AB - Nanohole formation on an AlAs/GaAs superlattice gives insight to both the "drilling" effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets "drill" through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01-1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.

KW - Atomic force microscopy

KW - Molecular beam epitaxy

KW - Transmission electron microscopy

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UR - http://www.scopus.com/inward/citedby.url?scp=55849091725&partnerID=8YFLogxK

U2 - 10.1007/s11671-008-9194-5

DO - 10.1007/s11671-008-9194-5

M3 - Article

AN - SCOPUS:55849091725

SN - 1931-7573

VL - 3

SP - 530

EP - 533

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 12

ER -

Structural evolution during formation and filling of self-patterned nanoholes on gaas (100) surfaces

Abstract

Keywords

ASJC Scopus subject areas

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