Structural evolution during formation and filling of self-patterned nanoholes on gaas (100) surfaces

K. A. Sablon, Zh M. Wang, G. J. Salamo, Lin Zhou, David Smith

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Nanohole formation on an AlAs/GaAs superlattice gives insight to both the "drilling" effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets "drill" through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01-1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.

Original languageEnglish (US)
Pages (from-to)530-533
Number of pages4
JournalNanoscale Research Letters
Volume3
Issue number12
DOIs
StatePublished - Dec 2008

Keywords

  • Atomic force microscopy
  • Molecular beam epitaxy
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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