Structural, electrical, and thermoelectric properties of CrSi2 thin films

Makram Abd El Qader; Rama Venkat; Ravhi Kumar; Thomas Hartmann; Paolo Ginobbi; Nathan Newman; Rakesh Singh

doi:10.1016/j.tsf.2013.07.040

Structural, electrical, and thermoelectric properties of CrSi₂ thin films

Makram Abd El Qader, Rama Venkat, Ravhi Kumar, Thomas Hartmann, Paolo Ginobbi, Nathan Newman, Rakesh Singh

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Chromium silicide (CrSi₂) thermoelectric thin films with two different thicknesses, 1 μm and 0.1 μm, were deposited using radio frequency magnetron sputtering on glass substrates.These films were characterized after deposition and then after 300-600 C anneals using X-ray diffraction and Energy dispersive X-ray spectroscopy.The Seebeck coefficient and electrical resistivity were measured.The compositions of the sputtered films were found to be close to the sputtering target stoichiometry.The annealing conditions and variations of thickness had a great influence on the thermoelectric performance of the films.The 0.1 μm p-type films annealed in an argon atmosphere at 400 C exhibited the largest power factor of 1.0 × 10^{- 3} W/(K²·m).

Original language	English (US)
Pages (from-to)	100-105
Number of pages	6
Journal	Thin Solid Films
Volume	545
DOIs	https://doi.org/10.1016/j.tsf.2013.07.040
State	Published - Oct 31 2013

Keywords

Silicides
Sputtering
Thermoelectric power

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2013.07.040

Cite this

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title = "Structural, electrical, and thermoelectric properties of CrSi2 thin films",

abstract = "Chromium silicide (CrSi2) thermoelectric thin films with two different thicknesses, 1 μm and 0.1 μm, were deposited using radio frequency magnetron sputtering on glass substrates.These films were characterized after deposition and then after 300-600 C anneals using X-ray diffraction and Energy dispersive X-ray spectroscopy.The Seebeck coefficient and electrical resistivity were measured.The compositions of the sputtered films were found to be close to the sputtering target stoichiometry.The annealing conditions and variations of thickness had a great influence on the thermoelectric performance of the films.The 0.1 μm p-type films annealed in an argon atmosphere at 400 C exhibited the largest power factor of 1.0 × 10- 3 W/(K2·m).",

keywords = "Silicides, Sputtering, Thermoelectric power",

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T1 - Structural, electrical, and thermoelectric properties of CrSi2 thin films

AU - Abd El Qader, Makram

AU - Venkat, Rama

AU - Kumar, Ravhi

AU - Hartmann, Thomas

AU - Ginobbi, Paolo

AU - Newman, Nathan

AU - Singh, Rakesh

PY - 2013/10/31

Y1 - 2013/10/31

N2 - Chromium silicide (CrSi2) thermoelectric thin films with two different thicknesses, 1 μm and 0.1 μm, were deposited using radio frequency magnetron sputtering on glass substrates.These films were characterized after deposition and then after 300-600 C anneals using X-ray diffraction and Energy dispersive X-ray spectroscopy.The Seebeck coefficient and electrical resistivity were measured.The compositions of the sputtered films were found to be close to the sputtering target stoichiometry.The annealing conditions and variations of thickness had a great influence on the thermoelectric performance of the films.The 0.1 μm p-type films annealed in an argon atmosphere at 400 C exhibited the largest power factor of 1.0 × 10- 3 W/(K2·m).

AB - Chromium silicide (CrSi2) thermoelectric thin films with two different thicknesses, 1 μm and 0.1 μm, were deposited using radio frequency magnetron sputtering on glass substrates.These films were characterized after deposition and then after 300-600 C anneals using X-ray diffraction and Energy dispersive X-ray spectroscopy.The Seebeck coefficient and electrical resistivity were measured.The compositions of the sputtered films were found to be close to the sputtering target stoichiometry.The annealing conditions and variations of thickness had a great influence on the thermoelectric performance of the films.The 0.1 μm p-type films annealed in an argon atmosphere at 400 C exhibited the largest power factor of 1.0 × 10- 3 W/(K2·m).

KW - Silicides

KW - Sputtering

KW - Thermoelectric power

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