Structural disorder induced in hydrogenated amorphous silicon by light soaking

J. M. Gibson, Michael Treacy, P. M. Voyles, H. C. Jin, J. R. Abelson

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler-Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network.

Original languageEnglish (US)
Pages (from-to)3093-3095
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number21
DOIs
StatePublished - 1998
Externally publishedYes

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soaking
immunity
amorphous silicon
disorders
degradation
transmission electron microscopy
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structural disorder induced in hydrogenated amorphous silicon by light soaking. / Gibson, J. M.; Treacy, Michael; Voyles, P. M.; Jin, H. C.; Abelson, J. R.

In: Applied Physics Letters, Vol. 73, No. 21, 1998, p. 3093-3095.

Research output: Contribution to journalArticle

Gibson, J. M. ; Treacy, Michael ; Voyles, P. M. ; Jin, H. C. ; Abelson, J. R. / Structural disorder induced in hydrogenated amorphous silicon by light soaking. In: Applied Physics Letters. 1998 ; Vol. 73, No. 21. pp. 3093-3095.
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