Structural defect-related photoluminescence in GaN

L. Chen; Brian Skromme; M. K. Mikhov; H. Yamane; M. Aoki; F. J. DiSalvo; B. Wagner; R. F. Davis; P. A. Grudowski; R. D. Dupuis

Structural defect-related photoluminescence in GaN

L. Chen, Brian Skromme, M. K. Mikhov, H. Yamane, M. Aoki, F. J. DiSalvo, B. Wagner, R. F. Davis, P. A. Grudowski, R. D. Dupuis

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean
Pages	637-642
Number of pages	6
Volume	798
State	Published - 2003
Event	GaN and Related Alloys - 2003 - Boston, MA, United States Duration: Dec 1 2003 → Dec 5 2003

Other

Other	GaN and Related Alloys - 2003
Country/Territory	United States
City	Boston, MA
Period	12/1/03 → 12/5/03

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{ccf968bc412f40e396a36fdd208aa9d4,

title = "Structural defect-related photoluminescence in GaN",

abstract = "Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.",

author = "L. Chen and Brian Skromme and Mikhov, {M. K.} and H. Yamane and M. Aoki and DiSalvo, {F. J.} and B. Wagner and Davis, {R. F.} and Grudowski, {P. A.} and Dupuis, {R. D.}",

year = "2003",

language = "English (US)",

volume = "798",

pages = "637--642",

editor = "H.M. Ng and M. Wraback and K. Hiramatsu and N. Grandjean",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "GaN and Related Alloys - 2003 ; Conference date: 01-12-2003 Through 05-12-2003",

}

TY - GEN

T1 - Structural defect-related photoluminescence in GaN

AU - Chen, L.

AU - Skromme, Brian

AU - Mikhov, M. K.

AU - Yamane, H.

AU - Aoki, M.

AU - DiSalvo, F. J.

AU - Wagner, B.

AU - Davis, R. F.

AU - Grudowski, P. A.

AU - Dupuis, R. D.

PY - 2003

Y1 - 2003

N2 - Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

AB - Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

UR - http://www.scopus.com/inward/record.url?scp=2942668172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942668172&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:2942668172

VL - 798

SP - 637

EP - 642

BT - Materials Research Society Symposium - Proceedings

A2 - Ng, H.M.

A2 - Wraback, M.

A2 - Hiramatsu, K.

A2 - Grandjean, N.

T2 - GaN and Related Alloys - 2003

Y2 - 1 December 2003 through 5 December 2003

ER -

Structural defect-related photoluminescence in GaN

Abstract

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ASJC Scopus subject areas

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