Structural defect-related photoluminescence in GaN

L. Chen, Brian Skromme, M. K. Mikhov, H. Yamane, M. Aoki, F. J. DiSalvo, B. Wagner, R. F. Davis, P. A. Grudowski, R. D. Dupuis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsH.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean
Pages637-642
Number of pages6
Volume798
StatePublished - 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: Dec 1 2003Dec 5 2003

Other

OtherGaN and Related Alloys - 2003
CountryUnited States
CityBoston, MA
Period12/1/0312/5/03

Fingerprint

Photoluminescence
Defects
Aluminum Oxide
Stacking faults
Metallorganic chemical vapor deposition
Substrates
Sapphire
Fluxes
Crystals
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chen, L., Skromme, B., Mikhov, M. K., Yamane, H., Aoki, M., DiSalvo, F. J., ... Dupuis, R. D. (2003). Structural defect-related photoluminescence in GaN. In H. M. Ng, M. Wraback, K. Hiramatsu, & N. Grandjean (Eds.), Materials Research Society Symposium - Proceedings (Vol. 798, pp. 637-642)

Structural defect-related photoluminescence in GaN. / Chen, L.; Skromme, Brian; Mikhov, M. K.; Yamane, H.; Aoki, M.; DiSalvo, F. J.; Wagner, B.; Davis, R. F.; Grudowski, P. A.; Dupuis, R. D.

Materials Research Society Symposium - Proceedings. ed. / H.M. Ng; M. Wraback; K. Hiramatsu; N. Grandjean. Vol. 798 2003. p. 637-642.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, L, Skromme, B, Mikhov, MK, Yamane, H, Aoki, M, DiSalvo, FJ, Wagner, B, Davis, RF, Grudowski, PA & Dupuis, RD 2003, Structural defect-related photoluminescence in GaN. in HM Ng, M Wraback, K Hiramatsu & N Grandjean (eds), Materials Research Society Symposium - Proceedings. vol. 798, pp. 637-642, GaN and Related Alloys - 2003, Boston, MA, United States, 12/1/03.
Chen L, Skromme B, Mikhov MK, Yamane H, Aoki M, DiSalvo FJ et al. Structural defect-related photoluminescence in GaN. In Ng HM, Wraback M, Hiramatsu K, Grandjean N, editors, Materials Research Society Symposium - Proceedings. Vol. 798. 2003. p. 637-642
Chen, L. ; Skromme, Brian ; Mikhov, M. K. ; Yamane, H. ; Aoki, M. ; DiSalvo, F. J. ; Wagner, B. ; Davis, R. F. ; Grudowski, P. A. ; Dupuis, R. D. / Structural defect-related photoluminescence in GaN. Materials Research Society Symposium - Proceedings. editor / H.M. Ng ; M. Wraback ; K. Hiramatsu ; N. Grandjean. Vol. 798 2003. pp. 637-642
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abstract = "Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.",
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AU - Chen, L.

AU - Skromme, Brian

AU - Mikhov, M. K.

AU - Yamane, H.

AU - Aoki, M.

AU - DiSalvo, F. J.

AU - Wagner, B.

AU - Davis, R. F.

AU - Grudowski, P. A.

AU - Dupuis, R. D.

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N2 - Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

AB - Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

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