Structural characterization of ultrathin nanocrystalline silicon films formed by annealing amorphous silicon

J. Lützen, A. H M Kamal, Michael Kozicki, D. K. Ferry, M. V. Sidorov, David Smith

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The fabrication and structural characteristics of ultrathin nanocrystallization silicon films is reported. Amorphous Si layers, with nominal thicknesses in the range of 3.5-11 nm, were deposited by low-pressure chemical vapor deposition onto amorphous SiO 2 and then crystallized using rapid thermal annealing at temperatures from 650 to 750 °C. High-resolution electron microscopy revealed that the resulting films were comprised almost entirely of Si nanocrystallites with a small fraction of remaining amorphous material. The grain size in the vertical growth direction was controlled by the thickness of the as-deposited amorphous Si film, whereas the lateral grain size was determined by appropriate choice of the annealing conditions.

Original languageEnglish (US)
Pages (from-to)2802-2805
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number5
StatePublished - Sep 1 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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