Structural characterization of non-polar (1 1 2 0) and semi-polar (1 1 2 6) GaN films grown on r-plane sapphire

Lin Zhou, R. Chandrasekaran, T. D. Moustakas, David Smith

Research output: Contribution to journalArticle

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Abstract

Thick GaN films, with (1 1 2 0) or (1 1 2 6) planes parallel to the r-plane of sapphire, were grown by molecular beam epitaxy using AlN or GaN buffer layers. Characterization by transmission electron microscopy revealed a high density of basal-plane stacking faults (BSFs) in the (1 1 2 0) non-polar GaN (a-GaN) films. {1 1 2 0} and {1 0 1 0} prismatic-plane and {1 1 0 2} pyramidal-plane stacking faults (SFs) were observed to terminate some BSFs. The SFs on {1 0 1 0} and {1 1 0 2} planes generally formed closed domains. For (1 1 2 6) semi-polar GaN (s-GaN) films, most threading dislocations were located at small-angle grain boundaries. Many BSFs were observed close to the AlN/GaN interface but, in comparison with a-GaN, the s-GaN films had much lower BSF density at the top surface. Inversion domain boundaries (IDBs) on {1 0 1 0} planes were observed to form closed domains. GaN/AlGaN multiple quantum wells (MQWs) grown on s-GaN or a-GaN followed the morphology of the GaN surface. Some IDBs in the s-GaN propagated through the GaN/AlGaN MQWs to the top surface.

Original languageEnglish (US)
Pages (from-to)2981-2986
Number of pages6
JournalJournal of Crystal Growth
Volume310
Issue number12
DOIs
StatePublished - Jun 1 2008

Fingerprint

Aluminum Oxide
Stacking faults
Sapphire
crystal defects
sapphire
Semiconductor quantum wells
quantum wells
inversions
Buffer layers
Dislocations (crystals)
Thick films
Molecular beam epitaxy
thick films
Grain boundaries
molecular beam epitaxy
grain boundaries
buffers
Transmission electron microscopy
transmission electron microscopy

Keywords

  • A1. Characterization
  • A3. Molecular beam epitaxy
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Structural characterization of non-polar (1 1 2 0) and semi-polar (1 1 2 6) GaN films grown on r-plane sapphire. / Zhou, Lin; Chandrasekaran, R.; Moustakas, T. D.; Smith, David.

In: Journal of Crystal Growth, Vol. 310, No. 12, 01.06.2008, p. 2981-2986.

Research output: Contribution to journalArticle

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AB - Thick GaN films, with (1 1 2 0) or (1 1 2 6) planes parallel to the r-plane of sapphire, were grown by molecular beam epitaxy using AlN or GaN buffer layers. Characterization by transmission electron microscopy revealed a high density of basal-plane stacking faults (BSFs) in the (1 1 2 0) non-polar GaN (a-GaN) films. {1 1 2 0} and {1 0 1 0} prismatic-plane and {1 1 0 2} pyramidal-plane stacking faults (SFs) were observed to terminate some BSFs. The SFs on {1 0 1 0} and {1 1 0 2} planes generally formed closed domains. For (1 1 2 6) semi-polar GaN (s-GaN) films, most threading dislocations were located at small-angle grain boundaries. Many BSFs were observed close to the AlN/GaN interface but, in comparison with a-GaN, the s-GaN films had much lower BSF density at the top surface. Inversion domain boundaries (IDBs) on {1 0 1 0} planes were observed to form closed domains. GaN/AlGaN multiple quantum wells (MQWs) grown on s-GaN or a-GaN followed the morphology of the GaN surface. Some IDBs in the s-GaN propagated through the GaN/AlGaN MQWs to the top surface.

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