Structural characterization of low-defect-density silicon on sapphire

Kent W. Carey, Fernando A. Ponce, Jun Amano, Julio Aranovich

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The structure of (100) silicon on (11̄02) sapphire is discussed for films grown by a special, defect-limiting process. A three-epitaxial-step technique, which utilizes both vapor phase epitaxy and solid phase epitaxy, is employed in the fabrication of low-defect-density films. The effects of different Si+ implantation energies and initial Si film thicknesses on the final structure of the film are investigated in order to optimize the electrical characteristics. The improvement in crystalline quality during the solid phase epitaxy step is due to overgrowth of the {221}-oriented microtwins by the [001) Si matrix. Both Rutherford backscattering spectroscopy and cross-sectional transmission electron microscopy are used in the analysis of the structure of these films.

Original languageEnglish (US)
Pages (from-to)4414-4420
Number of pages7
JournalJournal of Applied Physics
Issue number8
StatePublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Structural characterization of low-defect-density silicon on sapphire'. Together they form a unique fingerprint.

Cite this