Structural characterization of III-nitride materials and devices

David Smith, Lin Zhou, T. D. Moustakas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electron microscope provides a wide range of techniques that are very well suited for structural characterization of nanophotonic materials and devices. High-resolution electron microscopy (defect identification and strain field analysis), Z-contrast imaging in the scanning transmission electron microscope (cation distribution), convergent-beam electron diffraction (local lattice parameter and strain), and off-axis electron holography (internal electrostatic fields), represent powerful complementary approaches for distinguishing between the often-competing effects of growth conditions and compositional differences. These various TEM techniques have been used separately or in tandem in our recent collaborative studies of III-nitride heterostructures and nanostructures, where lattice mismatch, compositional inhomogeneities and phase separation were all important considerations that can possibly impair the structural quality of the final material and/or device. Representative applications that illustrate the prospects and some of the problems include the following: i) relaxed InN quantum dots; ii) deep-UV-emitting AlGaN quantum wells; iii) near-UV light-emitting diodes based on InN/GaN quantum wells; and iv) blue-green LEDs based on GaN quantum-dot superlattices.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices VIII
DOIs
StatePublished - May 13 2011
EventQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
Duration: Jan 23 2011Jan 27 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7945
ISSN (Print)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices VIII
CountryUnited States
CitySan Francisco, CA
Period1/23/111/27/11

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Keywords

  • III-nitride
  • internal quantum efficiency
  • lateral phase separation
  • multiple quantum well
  • polarization field
  • quantum dot
  • transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Smith, D., Zhou, L., & Moustakas, T. D. (2011). Structural characterization of III-nitride materials and devices. In Quantum Sensing and Nanophotonic Devices VIII [79451E] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7945). https://doi.org/10.1117/12.877470