Structural characterization of III-nitride materials and devices

David Smith, Lin Zhou, T. D. Moustakas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electron microscope provides a wide range of techniques that are very well suited for structural characterization of nanophotonic materials and devices. High-resolution electron microscopy (defect identification and strain field analysis), Z-contrast imaging in the scanning transmission electron microscope (cation distribution), convergent-beam electron diffraction (local lattice parameter and strain), and off-axis electron holography (internal electrostatic fields), represent powerful complementary approaches for distinguishing between the often-competing effects of growth conditions and compositional differences. These various TEM techniques have been used separately or in tandem in our recent collaborative studies of III-nitride heterostructures and nanostructures, where lattice mismatch, compositional inhomogeneities and phase separation were all important considerations that can possibly impair the structural quality of the final material and/or device. Representative applications that illustrate the prospects and some of the problems include the following: i) relaxed InN quantum dots; ii) deep-UV-emitting AlGaN quantum wells; iii) near-UV light-emitting diodes based on InN/GaN quantum wells; and iv) blue-green LEDs based on GaN quantum-dot superlattices.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7945
DOIs
StatePublished - 2011
EventQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
Duration: Jan 23 2011Jan 27 2011

Other

OtherQuantum Sensing and Nanophotonic Devices VIII
CountryUnited States
CitySan Francisco, CA
Period1/23/111/27/11

Fingerprint

Nitrides
Semiconductor quantum wells
Semiconductor quantum dots
nitrides
Electron microscopes
light emitting diodes
electron microscopes
quantum dots
Electron holography
quantum wells
Quantum Well
Electron
Quantum Dots
Nanophotonics
Microscope
Lattice mismatch
High resolution electron microscopy
Superlattices
Electron diffraction
Ultraviolet radiation

Keywords

  • III-nitride
  • internal quantum efficiency
  • lateral phase separation
  • multiple quantum well
  • polarization field
  • quantum dot
  • transmission electron microscopy

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Smith, D., Zhou, L., & Moustakas, T. D. (2011). Structural characterization of III-nitride materials and devices. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7945). [79451E] https://doi.org/10.1117/12.877470

Structural characterization of III-nitride materials and devices. / Smith, David; Zhou, Lin; Moustakas, T. D.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7945 2011. 79451E.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Smith, D, Zhou, L & Moustakas, TD 2011, Structural characterization of III-nitride materials and devices. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7945, 79451E, Quantum Sensing and Nanophotonic Devices VIII, San Francisco, CA, United States, 1/23/11. https://doi.org/10.1117/12.877470
Smith D, Zhou L, Moustakas TD. Structural characterization of III-nitride materials and devices. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7945. 2011. 79451E https://doi.org/10.1117/12.877470
Smith, David ; Zhou, Lin ; Moustakas, T. D. / Structural characterization of III-nitride materials and devices. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7945 2011.
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