Structural characterization of gaas/gap superlattices

A. Mazuelas, A. Ruizt, Fernando Ponce, F. Briones

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Powder and double-crystal x-ray diffraction were used to study the structural properties of highly strained (GaAs)«/(GaP)M short-period superlattices grown on GaAs (001) substrates. In spite of the large lattice mismatch (f = 3.6%) between GaAs and GaP and the competition for incorporation between As and F» high-quality short-period superlattices of GaAs/GaP have been grown by a development of conventional molecular beam epitaxy named atomic layer molecular beam epitaxy. The in-plane lattice parameter (ay) of the different superlattices was measured and studied as a function of the GaP content. We found that, for a given total superlattice thickness of 4000 A, the critical lattice mismatch is fc ~ 0.5% (corresponding to an average GaP content of 13.6% in the superlattice). This means that for an average misfit or lattice mismatch above fc the superlattice starts to relax. This experimental result is compared with predictions of critical thickness theories based on energy criteria. A clear relation of the degree of relaxation with peak width of the superlattice zeroth-order diffraction peak is found. High-resolution transmission electron microscopy has been performed to analyse the type of dislocations that relax the mismatched layers.

Original languageEnglish (US)
Pages (from-to)A167-A172
JournalJournal of Physics D: Applied Physics
Volume26
Issue number4
DOIs
StatePublished - Apr 14 1993
Externally publishedYes

Fingerprint

Lattice mismatch
Superlattices
superlattices
Molecular beam epitaxy
molecular beam epitaxy
Diffraction
Atomic layer epitaxy
atomic layer epitaxy
High resolution transmission electron microscopy
Lattice constants
Structural properties
lattice parameters
x ray diffraction
Powders
X rays
transmission electron microscopy
Crystals
high resolution
Substrates
predictions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Structural characterization of gaas/gap superlattices. / Mazuelas, A.; Ruizt, A.; Ponce, Fernando; Briones, F.

In: Journal of Physics D: Applied Physics, Vol. 26, No. 4, 14.04.1993, p. A167-A172.

Research output: Contribution to journalArticle

Mazuelas, A. ; Ruizt, A. ; Ponce, Fernando ; Briones, F. / Structural characterization of gaas/gap superlattices. In: Journal of Physics D: Applied Physics. 1993 ; Vol. 26, No. 4. pp. A167-A172.
@article{029454668d06470e9d9b1147d8ffd2af,
title = "Structural characterization of gaas/gap superlattices",
abstract = "Powder and double-crystal x-ray diffraction were used to study the structural properties of highly strained (GaAs)«/(GaP)M short-period superlattices grown on GaAs (001) substrates. In spite of the large lattice mismatch (f = 3.6{\%}) between GaAs and GaP and the competition for incorporation between As and F» high-quality short-period superlattices of GaAs/GaP have been grown by a development of conventional molecular beam epitaxy named atomic layer molecular beam epitaxy. The in-plane lattice parameter (ay) of the different superlattices was measured and studied as a function of the GaP content. We found that, for a given total superlattice thickness of 4000 A, the critical lattice mismatch is fc ~ 0.5{\%} (corresponding to an average GaP content of 13.6{\%} in the superlattice). This means that for an average misfit or lattice mismatch above fc the superlattice starts to relax. This experimental result is compared with predictions of critical thickness theories based on energy criteria. A clear relation of the degree of relaxation with peak width of the superlattice zeroth-order diffraction peak is found. High-resolution transmission electron microscopy has been performed to analyse the type of dislocations that relax the mismatched layers.",
author = "A. Mazuelas and A. Ruizt and Fernando Ponce and F. Briones",
year = "1993",
month = "4",
day = "14",
doi = "10.1088/0022-3727/26/4A/035",
language = "English (US)",
volume = "26",
pages = "A167--A172",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "4",

}

TY - JOUR

T1 - Structural characterization of gaas/gap superlattices

AU - Mazuelas, A.

AU - Ruizt, A.

AU - Ponce, Fernando

AU - Briones, F.

PY - 1993/4/14

Y1 - 1993/4/14

N2 - Powder and double-crystal x-ray diffraction were used to study the structural properties of highly strained (GaAs)«/(GaP)M short-period superlattices grown on GaAs (001) substrates. In spite of the large lattice mismatch (f = 3.6%) between GaAs and GaP and the competition for incorporation between As and F» high-quality short-period superlattices of GaAs/GaP have been grown by a development of conventional molecular beam epitaxy named atomic layer molecular beam epitaxy. The in-plane lattice parameter (ay) of the different superlattices was measured and studied as a function of the GaP content. We found that, for a given total superlattice thickness of 4000 A, the critical lattice mismatch is fc ~ 0.5% (corresponding to an average GaP content of 13.6% in the superlattice). This means that for an average misfit or lattice mismatch above fc the superlattice starts to relax. This experimental result is compared with predictions of critical thickness theories based on energy criteria. A clear relation of the degree of relaxation with peak width of the superlattice zeroth-order diffraction peak is found. High-resolution transmission electron microscopy has been performed to analyse the type of dislocations that relax the mismatched layers.

AB - Powder and double-crystal x-ray diffraction were used to study the structural properties of highly strained (GaAs)«/(GaP)M short-period superlattices grown on GaAs (001) substrates. In spite of the large lattice mismatch (f = 3.6%) between GaAs and GaP and the competition for incorporation between As and F» high-quality short-period superlattices of GaAs/GaP have been grown by a development of conventional molecular beam epitaxy named atomic layer molecular beam epitaxy. The in-plane lattice parameter (ay) of the different superlattices was measured and studied as a function of the GaP content. We found that, for a given total superlattice thickness of 4000 A, the critical lattice mismatch is fc ~ 0.5% (corresponding to an average GaP content of 13.6% in the superlattice). This means that for an average misfit or lattice mismatch above fc the superlattice starts to relax. This experimental result is compared with predictions of critical thickness theories based on energy criteria. A clear relation of the degree of relaxation with peak width of the superlattice zeroth-order diffraction peak is found. High-resolution transmission electron microscopy has been performed to analyse the type of dislocations that relax the mismatched layers.

UR - http://www.scopus.com/inward/record.url?scp=27744531145&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744531145&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/26/4A/035

DO - 10.1088/0022-3727/26/4A/035

M3 - Article

AN - SCOPUS:27744531145

VL - 26

SP - A167-A172

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 4

ER -