Structural characterization of base/collector interfaces for magnetic tunnel transistors grown on Si(001)

Hua Wang, Martha McCartney, David Smith, Xin Jiang, Roger Wang, Sebastiaan Van Dijken, Stuart S P Parkin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The microstructure and composition of magnetic tunnel transistors (MTTs), grown on Si(001) collector substrates, have been investigated using high-resolution and analytical electron microscopy. The effects of different seed layers, including a ferromagnetic metal Fe, and noble metals Pd, Ir, Re, and Ru, on the tunnel junction morphology were studied. The Pd seed layers reacted with the Si substrate, and gave MTTs with a small transfer ratio and relatively large leakage current. Devices based on Ir and Re seed layers invariably shorted out, as did most of those with Ru seed layers. Very thin Fe seed layers gave flat and more abrupt seed-layer/Si substrate interfaces, and among the samples studied, the best transport properties were achieved for a thin Fe seed layer in combination with Co70Fe30 base layer.

Original languageEnglish (US)
Article number104514
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
StatePublished - May 15 2005

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accumulators
tunnels
seeds
transistors
flat layers
noble metals
tunnel junctions
electron microscopy
leakage
transport properties
microstructure
high resolution
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Structural characterization of base/collector interfaces for magnetic tunnel transistors grown on Si(001). / Wang, Hua; McCartney, Martha; Smith, David; Jiang, Xin; Wang, Roger; Van Dijken, Sebastiaan; Parkin, Stuart S P.

In: Journal of Applied Physics, Vol. 97, No. 10, 104514, 15.05.2005.

Research output: Contribution to journalArticle

Wang, Hua ; McCartney, Martha ; Smith, David ; Jiang, Xin ; Wang, Roger ; Van Dijken, Sebastiaan ; Parkin, Stuart S P. / Structural characterization of base/collector interfaces for magnetic tunnel transistors grown on Si(001). In: Journal of Applied Physics. 2005 ; Vol. 97, No. 10.
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