STRUCTURAL CHANGES DURING TRANSIENT POST-ANNEALING OF PREANNEALED AND ARSENIC IMPLANTED POLYCRYSTALLINE SILICON FILMS.

Stephen Krause, S. R. Wilson, R. B. Gregory, W. M. Paulson, J. A. Leavitt, L. C. McIntyre, J. L. Seerveld, P. Stoss

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Polycrystalline silicon films were transient preannealed, As implanted, and transient post-annealed at peak temperatures up to 1250 degree C for times up to 17. 5 seconds. Structural changes occurring during post-annealing were examined by transmission electron microscopy. These results were correlated to Rutherford Backscattering and sheet resistance results. The grain size, which increased from 5-20 to 150-300 nm during preannealing, did not increase during post-annealing. During early stages of post-annealing, As diffused along grain boundaries and generated dislocation sources at grain boundary surfaces. Subsequently, as annealing progressed, a fine, As-rich cellular network structure propagated into the grains until the structure of an entire grain was transformed into a fine cellular network at the longest annealing times. Residual stresses in the film were relieved during formation of the network structure.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsThomas O. Sedgwick, Thomas E. Seidel, Bor-Yeu Tsaur
Place of PublicationPittsburgh, PA, USA
PublisherMaterials Research Soc
Pages145-152
Number of pages8
Volume52
ISBN (Print)0931837170
StatePublished - 1986

Fingerprint

Arsenic
Polysilicon
Annealing
Grain boundaries
Sheet resistance
Rutherford backscattering spectroscopy
Dislocations (crystals)
Residual stresses
Transmission electron microscopy
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Krause, S., Wilson, S. R., Gregory, R. B., Paulson, W. M., Leavitt, J. A., McIntyre, L. C., ... Stoss, P. (1986). STRUCTURAL CHANGES DURING TRANSIENT POST-ANNEALING OF PREANNEALED AND ARSENIC IMPLANTED POLYCRYSTALLINE SILICON FILMS. In T. O. Sedgwick, T. E. Seidel, & B-Y. Tsaur (Eds.), Materials Research Society Symposia Proceedings (Vol. 52, pp. 145-152). Pittsburgh, PA, USA: Materials Research Soc.

STRUCTURAL CHANGES DURING TRANSIENT POST-ANNEALING OF PREANNEALED AND ARSENIC IMPLANTED POLYCRYSTALLINE SILICON FILMS. / Krause, Stephen; Wilson, S. R.; Gregory, R. B.; Paulson, W. M.; Leavitt, J. A.; McIntyre, L. C.; Seerveld, J. L.; Stoss, P.

Materials Research Society Symposia Proceedings. ed. / Thomas O. Sedgwick; Thomas E. Seidel; Bor-Yeu Tsaur. Vol. 52 Pittsburgh, PA, USA : Materials Research Soc, 1986. p. 145-152.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Krause, S, Wilson, SR, Gregory, RB, Paulson, WM, Leavitt, JA, McIntyre, LC, Seerveld, JL & Stoss, P 1986, STRUCTURAL CHANGES DURING TRANSIENT POST-ANNEALING OF PREANNEALED AND ARSENIC IMPLANTED POLYCRYSTALLINE SILICON FILMS. in TO Sedgwick, TE Seidel & B-Y Tsaur (eds), Materials Research Society Symposia Proceedings. vol. 52, Materials Research Soc, Pittsburgh, PA, USA, pp. 145-152.
Krause S, Wilson SR, Gregory RB, Paulson WM, Leavitt JA, McIntyre LC et al. STRUCTURAL CHANGES DURING TRANSIENT POST-ANNEALING OF PREANNEALED AND ARSENIC IMPLANTED POLYCRYSTALLINE SILICON FILMS. In Sedgwick TO, Seidel TE, Tsaur B-Y, editors, Materials Research Society Symposia Proceedings. Vol. 52. Pittsburgh, PA, USA: Materials Research Soc. 1986. p. 145-152
Krause, Stephen ; Wilson, S. R. ; Gregory, R. B. ; Paulson, W. M. ; Leavitt, J. A. ; McIntyre, L. C. ; Seerveld, J. L. ; Stoss, P. / STRUCTURAL CHANGES DURING TRANSIENT POST-ANNEALING OF PREANNEALED AND ARSENIC IMPLANTED POLYCRYSTALLINE SILICON FILMS. Materials Research Society Symposia Proceedings. editor / Thomas O. Sedgwick ; Thomas E. Seidel ; Bor-Yeu Tsaur. Vol. 52 Pittsburgh, PA, USA : Materials Research Soc, 1986. pp. 145-152
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