@inproceedings{a0cf054e60f6403a876f75b2f49b42f9,
title = "STRUCTURAL CHANGES DURING TRANSIENT POST-ANNEALING OF PREANNEALED AND ARSENIC IMPLANTED POLYCRYSTALLINE SILICON FILMS.",
abstract = "Polycrystalline silicon films were transient preannealed, As implanted, and transient post-annealed at peak temperatures up to 1250 degree C for times up to 17. 5 seconds. Structural changes occurring during post-annealing were examined by transmission electron microscopy. These results were correlated to Rutherford Backscattering and sheet resistance results. The grain size, which increased from 5-20 to 150-300 nm during preannealing, did not increase during post-annealing. During early stages of post-annealing, As diffused along grain boundaries and generated dislocation sources at grain boundary surfaces. Subsequently, as annealing progressed, a fine, As-rich cellular network structure propagated into the grains until the structure of an entire grain was transformed into a fine cellular network at the longest annealing times. Residual stresses in the film were relieved during formation of the network structure.",
author = "Stephen Krause and Wilson, {S. R.} and Gregory, {R. B.} and Paulson, {W. M.} and Leavitt, {J. A.} and McIntyre, {L. C.} and Seerveld, {J. L.} and P. Stoss",
year = "1986",
language = "English (US)",
isbn = "0931837170",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "145--152",
editor = "Sedgwick, {Thomas O.} and Seidel, {Thomas E.} and Bor-Yeu Tsaur",
booktitle = "Materials Research Society Symposia Proceedings",
}