Structural changes during annealing of GaInAsN

Sarah Kurtz, J. Webb, L. Gedvilas, D. Friedman, J. Geisz, J. Olson, R. King, D. Joslin, N. Karam

Research output: Contribution to journalArticle

234 Scopus citations

Abstract

The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when GaInAsN is annealed. The Fourier transform infrared spectra exhibit two primary features: a triplet at ∼470 cm-1 (Ga-N stretch) and two or three bands at ∼3100 cm-1 (N-H stretch). The change in the Ga-N stretch absorption can be explained if the nitrogen environment is converted from NGa4 to NInGa3 after annealing. The N-H stretch is also changed after annealing, implying a second, and unrelated, structural change.

Original languageEnglish (US)
Pages (from-to)748-750
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number6
DOIs
StatePublished - Feb 5 2001
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Structural changes during annealing of GaInAsN'. Together they form a unique fingerprint.

  • Cite this

    Kurtz, S., Webb, J., Gedvilas, L., Friedman, D., Geisz, J., Olson, J., King, R., Joslin, D., & Karam, N. (2001). Structural changes during annealing of GaInAsN. Applied Physics Letters, 78(6), 748-750. https://doi.org/10.1063/1.1345819