Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure

Prudhvi Peri, Kai Fu, Houqiang Fu, Yuji Zhao, David J. Smith

Research output: Contribution to journalArticlepeer-review

Abstract

The morphology of GaN-on-GaN vertical p-i-n diode devices after reverse-bias electrical stressing to breakdown has been investigated. All failed devices had irreversible structural damage, showing large surface craters that were ∼15-35 μm deep with lengthy surface cracks. Cross-sectional electron micrographs of failed devices showed substantial concentrations of threading dislocations around the cracks and near the crater surfaces. Progressive ion-milling across damaged devices revealed high densities of threading dislocations and the presence of voids beneath the surface cracks; these features were not observed in any unstressed devices. These results should serve as a useful reference for future reliability studies of vertical high-power GaN devices.

Original languageEnglish (US)
Article number063402
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume38
Issue number6
DOIs
StatePublished - Dec 1 2020

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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