Structural and transport properties of InAs/AlSb superlattices

D. H. Chow, Yong-Hang Zhang, R. H. Miles, H. L. Dunlap

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report the demonstration of molecular beam epitaxy (MBE) grown InAs/AlSb superlattices with properties suitable for cladding layer materials in semiconductor diode lasers operating in the 2-5 μm spectral range. X-ray rocking curves of these superlattices reveal excellent structural quality and small lattice mismatch (Δa/a = 1.2 × 10-3) with respect to a GaSb substrate. Hall measurements reveal that controllable n-type doping of InAs/AlSb superlattices can be achieved by selectively codepositing silicon during growth of InAs layers. p-Type doping is performed by codepositing beryllium during growth of AlSb layers. InAs/AlSb superlattice p-n junctions have been fabricated and tested, yielding classical p-n diode current-voltage behavior. A simple double heterojunction diode laser, incorporating InAs/AlSb superlattice cladding layers and a GaxIn1-xAsySb1-y active layer, is demonstrated. The emission wavelength of the laser is 2.42 μm (2.50 μm) at 95 K (180 K).

Original languageEnglish (US)
Pages (from-to)879-882
Number of pages4
JournalJournal of Crystal Growth
Volume150
Issue number1 -4 pt 2
StatePublished - May 1 1995
Externally publishedYes

Fingerprint

Superlattices
Transport properties
superlattices
Structural properties
transport properties
Semiconductor lasers
Doping (additives)
Semiconductor diodes
Lattice mismatch
Beryllium
Molecular beam epitaxy
Heterojunctions
Diodes
Demonstrations
semiconductor diodes
Silicon
X rays
Wavelength
beryllium
p-n junctions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Chow, D. H., Zhang, Y-H., Miles, R. H., & Dunlap, H. L. (1995). Structural and transport properties of InAs/AlSb superlattices. Journal of Crystal Growth, 150(1 -4 pt 2), 879-882.

Structural and transport properties of InAs/AlSb superlattices. / Chow, D. H.; Zhang, Yong-Hang; Miles, R. H.; Dunlap, H. L.

In: Journal of Crystal Growth, Vol. 150, No. 1 -4 pt 2, 01.05.1995, p. 879-882.

Research output: Contribution to journalArticle

Chow, DH, Zhang, Y-H, Miles, RH & Dunlap, HL 1995, 'Structural and transport properties of InAs/AlSb superlattices', Journal of Crystal Growth, vol. 150, no. 1 -4 pt 2, pp. 879-882.
Chow DH, Zhang Y-H, Miles RH, Dunlap HL. Structural and transport properties of InAs/AlSb superlattices. Journal of Crystal Growth. 1995 May 1;150(1 -4 pt 2):879-882.
Chow, D. H. ; Zhang, Yong-Hang ; Miles, R. H. ; Dunlap, H. L. / Structural and transport properties of InAs/AlSb superlattices. In: Journal of Crystal Growth. 1995 ; Vol. 150, No. 1 -4 pt 2. pp. 879-882.
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