Structural and transport properties of InAs/AlSb superlattices

D. H. Chow, Y. H. Zhang, R. H. Miles, H. L. Dunlap

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

We report the demonstration of molecular beam epitaxy (MBE) grown InAs/AlSb superlattices with properties suitable for cladding layer materials in semiconductor diode lasers operating in the 2–5 μm spectral range. X-ray rocking curves of these superlattices reveal excellent structural quality and small lattice mismatch (Δa/a = 1.2 × 10−3) with respect to a GaSb substrate. Hall measurements reveal that controllable n-type doping of InAs/AlSb superlattices can be achieved by selectively codepositing silicon during growth of InAs layers. p-Type doping is performed by codepositing beryllium during growth of AlSb layers. InAs/AlSb superlattice p-n junctions have been fabricated and tested, yielding classical p-n diode current-voltage behavior. A simple double heterojunction diode laser, incorporating InAs/AlSb superlattice cladding layers and a GaxIn1−xAsySb1−y active layer, is demonstrated. The emission wavelength of the laser is 2.42 μm (2.50 μm) at 95 K (180 K).

Original languageEnglish (US)
Pages (from-to)879-882
Number of pages4
JournalJournal of Crystal Growth
Volume150
DOIs
StatePublished - Jan 1 1995
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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