Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates

R. Roucka, Y. J. An, Andrew Chizmeshya, V. R. D'Costa, J. Tolle, Jose Menendez, John Kouvetakis

Research output: Contribution to journalLetter

6 Scopus citations

Abstract

ZrB2 and HfxZr1-xB2 films were grown on 4° miscut Si(1 1 1) substrates by chemical vapor deposition of gaseous Hf(BH4)4 and Zr(BH4)4. The films display superior structural and optical properties when compared with ZrB2 films grown on on-axis Si(1 1 1). The observed improvements include an optically featureless surface with rms roughness of ∼2.5-3.5 nm, a ∼50% reduction in the amount of residual strain, and a ∼50% lower resistivity. These properties should promote the use of diboride films as buffer layers for nitride semiconductor epitaxy on large-area Si substrates.

Original languageEnglish (US)
Pages (from-to)1687-1690
Number of pages4
JournalSolid-State Electronics
Volume52
Issue number11
DOIs
StatePublished - Nov 1 2008

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Keywords

  • Diborides nitride epitaxy silicon substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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