ZrB2 and HfxZr1-xB2 films were grown on 4° miscut Si(1 1 1) substrates by chemical vapor deposition of gaseous Hf(BH4)4 and Zr(BH4)4. The films display superior structural and optical properties when compared with ZrB2 films grown on on-axis Si(1 1 1). The observed improvements include an optically featureless surface with rms roughness of ∼2.5-3.5 nm, a ∼50% reduction in the amount of residual strain, and a ∼50% lower resistivity. These properties should promote the use of diboride films as buffer layers for nitride semiconductor epitaxy on large-area Si substrates.
- Diborides nitride epitaxy silicon substrate
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry