Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates

R. Roucka, Y. J. An, Andrew Chizmeshya, V. R. D'Costa, J. Tolle, Jose Menendez, John Kouvetakis

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

ZrB2 and HfxZr1-xB2 films were grown on 4° miscut Si(1 1 1) substrates by chemical vapor deposition of gaseous Hf(BH4)4 and Zr(BH4)4. The films display superior structural and optical properties when compared with ZrB2 films grown on on-axis Si(1 1 1). The observed improvements include an optically featureless surface with rms roughness of ∼2.5-3.5 nm, a ∼50% reduction in the amount of residual strain, and a ∼50% lower resistivity. These properties should promote the use of diboride films as buffer layers for nitride semiconductor epitaxy on large-area Si substrates.

Original languageEnglish (US)
Pages (from-to)1687-1690
Number of pages4
JournalSolid-State Electronics
Volume52
Issue number11
DOIs
StatePublished - Nov 2008

Fingerprint

Epitaxial growth
epitaxy
Structural properties
Optical properties
optical properties
Substrates
Buffer layers
Nitrides
nitrides
Chemical vapor deposition
roughness
buffers
Surface roughness
vapor deposition
Semiconductor materials
electrical resistivity

Keywords

  • Diborides nitride epitaxy silicon substrate

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates. / Roucka, R.; An, Y. J.; Chizmeshya, Andrew; D'Costa, V. R.; Tolle, J.; Menendez, Jose; Kouvetakis, John.

In: Solid-State Electronics, Vol. 52, No. 11, 11.2008, p. 1687-1690.

Research output: Contribution to journalArticle

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AU - D'Costa, V. R.

AU - Tolle, J.

AU - Menendez, Jose

AU - Kouvetakis, John

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