The structural and optical properties of the normal GaAsSb/GaAs quantum wells (QWs) and strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP QWs using high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) were investigated. As such, the interface quality becomes higher and the clearer Pendellosung fringes were observed for strain-compensated GaAsSb QWs. The asymmetrical (224) reciprocal space mapping (RSM) measurements give evidence that the GaAsSB base layers remain fully elastic despite the high composition of Sb, up to 0.39 when the tensile layers GaAsP were added to the QW structure, while the normal GaAsSb/GaAs WQs appears to have partial relaxation of about 30%.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)