Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition

X. H. Zheng, D. S. Jiang, Shane Johnson, Yong-Hang Zhang

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Abstract

The structural and optical properties of the normal GaAsSb/GaAs quantum wells (QWs) and strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP QWs using high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) were investigated. As such, the interface quality becomes higher and the clearer Pendellosung fringes were observed for strain-compensated GaAsSb QWs. The asymmetrical (224) reciprocal space mapping (RSM) measurements give evidence that the GaAsSB base layers remain fully elastic despite the high composition of Sb, up to 0.39 when the tensile layers GaAsP were added to the QW structure, while the normal GaAsSb/GaAs WQs appears to have partial relaxation of about 30%.

Original languageEnglish (US)
Pages (from-to)4149-4151
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number20
DOIs
StatePublished - Nov 17 2003

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quantum wells
optical properties
x ray diffraction
photoluminescence
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition. / Zheng, X. H.; Jiang, D. S.; Johnson, Shane; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 83, No. 20, 17.11.2003, p. 4149-4151.

Research output: Contribution to journalArticle

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