Abstract

The impact of the Sb composition on the structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) were investigated using transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photoluminescence (PL). The TEM images demonstrate that the Sb composition affects the change in the QD density and morphology. From analysis of XRD reciprocal space maps (RSMs) of the (224) asymmetrical reflection, it is found that as the Sb composition increases the relaxation of the initial elastic stress of the GaAsSb increases up to 23 %. In addition, the Sb composition influences the interband optical transitions such as the PL peak redshift and carrier lifetimes.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1056-1058
Number of pages3
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Semiconductor quantum dots
Structural properties
Optical properties
Chemical analysis
Photoluminescence
Diffraction
X rays
Optical transitions
Carrier lifetime
High resolution transmission electron microscopy
Transmission electron microscopy
indium arsenide

Keywords

  • carrier lifetime
  • crystalline defects
  • intermediate band solar cells
  • photoluminescence
  • quantum dots

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kim, Y., Faleev, N., Tang, D., Smith, D., Kuciauskas, D., Dippo, P. C., & Honsberg, C. (2014). Structural and optical properties of multi-stack InAs/GaAsSb quantum dots with different Sb composition. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 1056-1058). [6925095] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925095

Structural and optical properties of multi-stack InAs/GaAsSb quantum dots with different Sb composition. / Kim, Yeongho; Faleev, Nikolai; Tang, Dinghao; Smith, David; Kuciauskas, Darius; Dippo, Patricia C.; Honsberg, Christiana.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1056-1058 6925095.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, Y, Faleev, N, Tang, D, Smith, D, Kuciauskas, D, Dippo, PC & Honsberg, C 2014, Structural and optical properties of multi-stack InAs/GaAsSb quantum dots with different Sb composition. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925095, Institute of Electrical and Electronics Engineers Inc., pp. 1056-1058, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925095
Kim Y, Faleev N, Tang D, Smith D, Kuciauskas D, Dippo PC et al. Structural and optical properties of multi-stack InAs/GaAsSb quantum dots with different Sb composition. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1056-1058. 6925095 https://doi.org/10.1109/PVSC.2014.6925095
Kim, Yeongho ; Faleev, Nikolai ; Tang, Dinghao ; Smith, David ; Kuciauskas, Darius ; Dippo, Patricia C. ; Honsberg, Christiana. / Structural and optical properties of multi-stack InAs/GaAsSb quantum dots with different Sb composition. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1056-1058
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