TY - GEN
T1 - Structural and optical properties of multi-stack InAs/GaAsSb quantum dots with different Sb composition
AU - Kim, Yeongho
AU - Faleev, Nikolai
AU - Tang, Dinghao
AU - Smith, David
AU - Kuciauskas, Darius
AU - Dippo, Patricia C.
AU - Honsberg, Christiana
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - The impact of the Sb composition on the structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) were investigated using transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photoluminescence (PL). The TEM images demonstrate that the Sb composition affects the change in the QD density and morphology. From analysis of XRD reciprocal space maps (RSMs) of the (224) asymmetrical reflection, it is found that as the Sb composition increases the relaxation of the initial elastic stress of the GaAsSb increases up to 23 %. In addition, the Sb composition influences the interband optical transitions such as the PL peak redshift and carrier lifetimes.
AB - The impact of the Sb composition on the structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) were investigated using transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photoluminescence (PL). The TEM images demonstrate that the Sb composition affects the change in the QD density and morphology. From analysis of XRD reciprocal space maps (RSMs) of the (224) asymmetrical reflection, it is found that as the Sb composition increases the relaxation of the initial elastic stress of the GaAsSb increases up to 23 %. In addition, the Sb composition influences the interband optical transitions such as the PL peak redshift and carrier lifetimes.
KW - carrier lifetime
KW - crystalline defects
KW - intermediate band solar cells
KW - photoluminescence
KW - quantum dots
UR - http://www.scopus.com/inward/record.url?scp=84912070753&partnerID=8YFLogxK
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U2 - 10.1109/PVSC.2014.6925095
DO - 10.1109/PVSC.2014.6925095
M3 - Conference contribution
AN - SCOPUS:84912070753
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 1056
EP - 1058
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -