Structural and optical properties of MgxCd1-xTe alloys grown on InSb (100) substrates using molecular beam epitaxy

Shi Liu, Xin Hao Zhao, Yuan Zhao, Calli Campbell, Maxwell Lassise, Ernesto Suarez, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A II-VI/Si tandem cell concept is proposed here to potentially reach greater than 30% energy conversion efficiency under one-sun condition. The required MgCdTe alloy with a bandgap of ∼ 1.7 eV has been successfully grown on InSb (100) substrates by molecular beam epitaxy with excellent structural and optical qualities, confirmed by high-resolution X-ray diffraction, and temperature-dependent steady-state and time-resolved photoluminescence.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Keywords

  • carrier lifetime
  • MgCdTe
  • molecular beam epitaxy
  • photoluminescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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