Structural and optical properties of MgxCd1-xTe alloys grown on InSb (100) substrates using molecular beam epitaxy

Shi Liu; Xin Hao Zhao; Yuan Zhao; Calli Campbell; Maxwell Lassise; Ernesto Suarez; Yong-Hang Zhang

doi:10.1109/PVSC.2015.7356376

Structural and optical properties of MgxCd1-xTe alloys grown on InSb (100) substrates using molecular beam epitaxy

Shi Liu, Xin Hao Zhao, Yuan Zhao, Calli Campbell, Maxwell Lassise, Ernesto Suarez, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A II-VI/Si tandem cell concept is proposed here to potentially reach greater than 30% energy conversion efficiency under one-sun condition. The required MgCdTe alloy with a bandgap of ∼ 1.7 eV has been successfully grown on InSb (100) substrates by molecular beam epitaxy with excellent structural and optical qualities, confirmed by high-resolution X-ray diffraction, and temperature-dependent steady-state and time-resolved photoluminescence.

Original language	English (US)
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356376
State	Published - Dec 14 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	6/14/15 → 6/19/15

Keywords

carrier lifetime
MgCdTe
molecular beam epitaxy
photoluminescence

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/PVSC.2015.7356376

Cite this

Liu, S., Zhao, X. H., Zhao, Y., Campbell, C., Lassise, M., Suarez, E., & Zhang, Y-H. (2015). Structural and optical properties of MgxCd1-xTe alloys grown on InSb (100) substrates using molecular beam epitaxy. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356376] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356376

Structural and optical properties of MgxCd1-xTe alloys grown on InSb (100) substrates using molecular beam epitaxy. / Liu, Shi; Zhao, Xin Hao; Zhao, Yuan et al.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356376.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, S, Zhao, XH, Zhao, Y, Campbell, C, Lassise, M, Suarez, E & Zhang, Y-H 2015, Structural and optical properties of MgxCd1-xTe alloys grown on InSb (100) substrates using molecular beam epitaxy. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356376, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7356376

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title = "Structural and optical properties of MgxCd1-xTe alloys grown on InSb (100) substrates using molecular beam epitaxy",

abstract = "A II-VI/Si tandem cell concept is proposed here to potentially reach greater than 30% energy conversion efficiency under one-sun condition. The required MgCdTe alloy with a bandgap of ∼ 1.7 eV has been successfully grown on InSb (100) substrates by molecular beam epitaxy with excellent structural and optical qualities, confirmed by high-resolution X-ray diffraction, and temperature-dependent steady-state and time-resolved photoluminescence.",

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doi = "10.1109/PVSC.2015.7356376",

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booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

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AU - Liu, Shi

AU - Zhao, Xin Hao

AU - Zhao, Yuan

AU - Campbell, Calli

AU - Lassise, Maxwell

AU - Suarez, Ernesto

AU - Zhang, Yong-Hang

PY - 2015/12/14

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N2 - A II-VI/Si tandem cell concept is proposed here to potentially reach greater than 30% energy conversion efficiency under one-sun condition. The required MgCdTe alloy with a bandgap of ∼ 1.7 eV has been successfully grown on InSb (100) substrates by molecular beam epitaxy with excellent structural and optical qualities, confirmed by high-resolution X-ray diffraction, and temperature-dependent steady-state and time-resolved photoluminescence.

AB - A II-VI/Si tandem cell concept is proposed here to potentially reach greater than 30% energy conversion efficiency under one-sun condition. The required MgCdTe alloy with a bandgap of ∼ 1.7 eV has been successfully grown on InSb (100) substrates by molecular beam epitaxy with excellent structural and optical qualities, confirmed by high-resolution X-ray diffraction, and temperature-dependent steady-state and time-resolved photoluminescence.

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KW - photoluminescence

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SN - 9781479979448

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Structural and optical properties of MgxCd1-xTe alloys grown on InSb (100) substrates using molecular beam epitaxy

Abstract

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Keywords

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