Structural and optical properties of inassbbi grown by molecular beam epitaxy on offcut gasb substrates

Rajeev R. Kosireddy, Stephen T. Schaefer, Marko S. Milosavljevic, Shane R. Johnson

Research output: Contribution to journalArticlepeer-review

Abstract

Three InAsSbBi samples are grown by molecular beam epitaxy at 400C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1 toward [011], and (100) offcut 4 toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011] step edges on the 1 and 4 offcut samples. No significant change in optical quality with offcut angle is observed.

Original languageEnglish (US)
Article number215
JournalPhotonics
Volume8
Issue number6
DOIs
StatePublished - Jun 2021

Keywords

  • Bismuth compounds
  • High resolution X-ray diffraction
  • Molecular beam epitaxy
  • Segregation
  • Semiconducting III-V alloys
  • Surfaces

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Radiology Nuclear Medicine and imaging

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