Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

D. S. Jiang, L. F. Bian, X. G. Liang, K. Chang, B. Q. Sun, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure.

Original languageEnglish (US)
Pages (from-to)336-341
Number of pages6
JournalJournal of Crystal Growth
Volume268
Issue number3-4 SPEC. ISS.
DOIs
StatePublished - Aug 1 2004
EventICMAT 2003, Symposium H, Compound Semiconductors in Electronic - Singapore, Singapore
Duration: Dec 7 2003Dec 12 2004

Keywords

  • A3. Molecular beam epitaxy
  • A3. Quantum wells
  • B1. GaAsSb/GaAs

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells'. Together they form a unique fingerprint.

Cite this