Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3)

C. W. Hu, A. Bell, L. Shi, Fernando Ponce, David Smith, I. S T Tsong

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001) surfaces via the vapor-liquid-vapor (VLS) mechanism were investigated. The microstructure of GaN islands was studied by high-resolution cross-sectional transmission electron microscopy, morphology by atomic force microscopy, and assembly of islands by scanning electron microscopy. Micro-Raman spectroscopy results showed the existence of tensile strain in the GaN islands.

Original languageEnglish (US)
Pages (from-to)2889-2891
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number17
DOIs
StatePublished - Apr 28 2003

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optical properties
vapors
Raman spectroscopy
assembly
atomic force microscopy
transmission electron microscopy
microstructure
scanning electron microscopy
high resolution
liquids

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3). / Hu, C. W.; Bell, A.; Shi, L.; Ponce, Fernando; Smith, David; Tsong, I. S T.

In: Applied Physics Letters, Vol. 82, No. 17, 28.04.2003, p. 2889-2891.

Research output: Contribution to journalArticle

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