Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3)

C. W. Hu; A. Bell; L. Shi; Fernando Ponce; David Smith; I. S T Tsong

doi:10.1063/1.1570000

Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3)

C. W. Hu, A. Bell, L. Shi, Fernando Ponce, David Smith, I. S T Tsong

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Abstract

Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001) surfaces via the vapor-liquid-vapor (VLS) mechanism were investigated. The microstructure of GaN islands was studied by high-resolution cross-sectional transmission electron microscopy, morphology by atomic force microscopy, and assembly of islands by scanning electron microscopy. Micro-Raman spectroscopy results showed the existence of tensile strain in the GaN islands.

Original language	English (US)
Pages (from-to)	2889-2891
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	17
DOIs	https://doi.org/10.1063/1.1570000
State	Published - Apr 28 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1570000

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abstract = "Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001) surfaces via the vapor-liquid-vapor (VLS) mechanism were investigated. The microstructure of GaN islands was studied by high-resolution cross-sectional transmission electron microscopy, morphology by atomic force microscopy, and assembly of islands by scanning electron microscopy. Micro-Raman spectroscopy results showed the existence of tensile strain in the GaN islands.",

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T1 - Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3)

AU - Hu, C. W.

AU - Bell, A.

AU - Shi, L.

AU - Ponce, Fernando

AU - Smith, David

AU - Tsong, I. S T

PY - 2003/4/28

Y1 - 2003/4/28

N2 - Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001) surfaces via the vapor-liquid-vapor (VLS) mechanism were investigated. The microstructure of GaN islands was studied by high-resolution cross-sectional transmission electron microscopy, morphology by atomic force microscopy, and assembly of islands by scanning electron microscopy. Micro-Raman spectroscopy results showed the existence of tensile strain in the GaN islands.

AB - Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001) surfaces via the vapor-liquid-vapor (VLS) mechanism were investigated. The microstructure of GaN islands was studied by high-resolution cross-sectional transmission electron microscopy, morphology by atomic force microscopy, and assembly of islands by scanning electron microscopy. Micro-Raman spectroscopy results showed the existence of tensile strain in the GaN islands.

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ER -

Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3)

Abstract

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