Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer

E. Tournié, Y. H. Zhang, N. J. Pulsford, K. Ploog

Research output: Contribution to journalArticle

46 Scopus citations


We have studied the crystalline and optical properties of Al yIn1-yAs ternary alloys grown by molecular beam epitaxy on InP substrates. We obtain Al0.48In0.52As layers with both high structural quality and excellent optical performance by growing (i) at high substrate temperature (600°C), (ii) on a high-quality Ga xIn1-xAs/AlyIn1-yAs short-period superlattice buffer, (iii) or on a high-quality GaxIn1-xAs buffer layer, as attested by double-crystal x-ray diffraction and photoluminescence measurements. In addition the experimental results indicate a significant reduction of the clustering level in these samples which is interpreted in terms of a smoothing of the growth front, a thermodynamically controlled growth mode, and the interplay between In segregation and In desorption. Our investigations further show that the improvement of the structural quality and of the optical performance are strongly correlated. Finally, we report the first evidence of excitonic features in photoluminescence excitation spectra of the AlyIn1-yAs ternary alloy.

Original languageEnglish (US)
Pages (from-to)7362-7369
Number of pages8
JournalJournal of Applied Physics
Issue number12
StatePublished - Dec 1 1991


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this