Structural and optical investigations of GaN-Si interface for a heterojunction solar cell

Joshua J. Williams, April M. Jeffries, Laura Ding, Srikanth Gangam, Kunal Ghosh, Todd L. Williamson, Mariana Bertoni, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In recent years the development of heterojunction silicon based solar cells has gained much attention, lead largely by the efforts of Panasonic's HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. The band gap, mobilities, and electron affinity of GaN make it an interesting candidate to solve problems of parasitic absorption while selectively extracting electrons. Using a novel MBE based growth technique, thin films of GaN have been deposited at temperature significantly lower than industry standards. Crystalline measurements and absorption data of GaN are presented. Additionally, effects of deposition on the silicon wafer lifetimes are presented

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages841-843
Number of pages3
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Heterojunctions
Solar cells
Thin films
Electron affinity
Silicon
Amorphous silicon
Silicon wafers
Molecular beam epitaxy
Energy gap
Crystalline materials
Electrons
Industry
Temperature

Keywords

  • gallium nitride
  • heterojunction
  • interface physics
  • molecular beam epitaxy
  • silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Williams, J. J., Jeffries, A. M., Ding, L., Gangam, S., Ghosh, K., Williamson, T. L., ... Honsberg, C. (2014). Structural and optical investigations of GaN-Si interface for a heterojunction solar cell. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 841-843). [6925046] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925046

Structural and optical investigations of GaN-Si interface for a heterojunction solar cell. / Williams, Joshua J.; Jeffries, April M.; Ding, Laura; Gangam, Srikanth; Ghosh, Kunal; Williamson, Todd L.; Bertoni, Mariana; Honsberg, Christiana.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 841-843 6925046.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Williams, JJ, Jeffries, AM, Ding, L, Gangam, S, Ghosh, K, Williamson, TL, Bertoni, M & Honsberg, C 2014, Structural and optical investigations of GaN-Si interface for a heterojunction solar cell. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925046, Institute of Electrical and Electronics Engineers Inc., pp. 841-843, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925046
Williams JJ, Jeffries AM, Ding L, Gangam S, Ghosh K, Williamson TL et al. Structural and optical investigations of GaN-Si interface for a heterojunction solar cell. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 841-843. 6925046 https://doi.org/10.1109/PVSC.2014.6925046
Williams, Joshua J. ; Jeffries, April M. ; Ding, Laura ; Gangam, Srikanth ; Ghosh, Kunal ; Williamson, Todd L. ; Bertoni, Mariana ; Honsberg, Christiana. / Structural and optical investigations of GaN-Si interface for a heterojunction solar cell. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 841-843
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