@inproceedings{ee8421889da94fce837a4dd7caca8049,
title = "Structural and optical investigations of GaN-Si interface for a heterojunction solar cell",
abstract = "In recent years the development of heterojunction silicon based solar cells has gained much attention, lead largely by the efforts of Panasonic's HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. The band gap, mobilities, and electron affinity of GaN make it an interesting candidate to solve problems of parasitic absorption while selectively extracting electrons. Using a novel MBE based growth technique, thin films of GaN have been deposited at temperature significantly lower than industry standards. Crystalline measurements and absorption data of GaN are presented.",
keywords = "gallium nitride, heterojunction, interface physics, molecular beam epitaxy, silicon",
author = "Williams, {Joshua J.} and Jeffries, {April M.} and Laura Ding and Srikanth Gangam and Kunal Ghosh and Williamson, {Todd L.} and Mariana Bertoni and Christiana Honsberg",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925046",
language = "English (US)",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "841--843",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
}