Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition

E. H. Steenbergen; Y. Huang; J. H. Ryou; L. Ouyang; J. J. Li; David Smith; R. D. Dupuis; Y. H. Zhang

doi:10.1063/1.3625429

Structural and optical characterization of type-II InAs/InAs _1-xSb_x superlattices grown by metalorganic chemical vapor deposition

E. H. Steenbergen, Y. Huang, J. H. Ryou, L. Ouyang, J. J. Li, David Smith, R. D. Dupuis, Y. H. Zhang

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Strain-balanced type-II InAs/InAs_1-xSb_x superlattices with various compositions (x 0.22, 0.23, 0.37) and different layer thicknesses (t_InAs 7 nm, t_InAsSb 3.3, 2.3, 2.0 nm, respectively) have been grown by metalorganic chemical vapor deposition on GaSb substrates. X-ray diffraction revealed narrow satellite peaks (full-width-half-maximum of <100 arc sec), indicative of uniform superlattice periodicity and excellent crystallinity, which was also corroborated by cross-sectional transmission electron microscopy observations. Despite relaxation, low-temperature photoluminescence measurements showed peaks at 6.7 μm and 5.8 μm, while photoconductance results showed strong spectral response up to 200 K, when the photoresponse onset was 8.6 μm.

Original language	English (US)
Article number	071111
Journal	Applied Physics Letters
Volume	99
Issue number	7
DOIs	https://doi.org/10.1063/1.3625429
State	Published - Aug 15 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3625429

Cite this

@article{71f2a098b5554efab3c81c7915e47b56,

title = "Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition",

abstract = "Strain-balanced type-II InAs/InAs1-xSbx superlattices with various compositions (x 0.22, 0.23, 0.37) and different layer thicknesses (tInAs 7 nm, tInAsSb 3.3, 2.3, 2.0 nm, respectively) have been grown by metalorganic chemical vapor deposition on GaSb substrates. X-ray diffraction revealed narrow satellite peaks (full-width-half-maximum of <100 arc sec), indicative of uniform superlattice periodicity and excellent crystallinity, which was also corroborated by cross-sectional transmission electron microscopy observations. Despite relaxation, low-temperature photoluminescence measurements showed peaks at 6.7 μm and 5.8 μm, while photoconductance results showed strong spectral response up to 200 K, when the photoresponse onset was 8.6 μm.",

author = "Steenbergen, {E. H.} and Y. Huang and Ryou, {J. H.} and L. Ouyang and Li, {J. J.} and David Smith and Dupuis, {R. D.} and Zhang, {Y. H.}",

note = "Funding Information: The authors are grateful for the support of ARO MURI programs W911NF-06-1-0353 and W911NF-10-1-0524 and an AFOSR Grant (FA9550-10-1-0129). Many experiments were performed at AFRL/RXPS with the support of G. Brown and B. Ullrich. E.H.S. appreciates the DOD SMART and SFAz scholarships. R.D.D. is thankful for the support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. ",

year = "2011",

month = aug,

day = "15",

doi = "10.1063/1.3625429",

language = "English (US)",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition

AU - Steenbergen, E. H.

AU - Huang, Y.

AU - Ryou, J. H.

AU - Ouyang, L.

AU - Li, J. J.

AU - Smith, David

AU - Dupuis, R. D.

AU - Zhang, Y. H.

N1 - Funding Information: The authors are grateful for the support of ARO MURI programs W911NF-06-1-0353 and W911NF-10-1-0524 and an AFOSR Grant (FA9550-10-1-0129). Many experiments were performed at AFRL/RXPS with the support of G. Brown and B. Ullrich. E.H.S. appreciates the DOD SMART and SFAz scholarships. R.D.D. is thankful for the support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.

PY - 2011/8/15

Y1 - 2011/8/15

N2 - Strain-balanced type-II InAs/InAs1-xSbx superlattices with various compositions (x 0.22, 0.23, 0.37) and different layer thicknesses (tInAs 7 nm, tInAsSb 3.3, 2.3, 2.0 nm, respectively) have been grown by metalorganic chemical vapor deposition on GaSb substrates. X-ray diffraction revealed narrow satellite peaks (full-width-half-maximum of <100 arc sec), indicative of uniform superlattice periodicity and excellent crystallinity, which was also corroborated by cross-sectional transmission electron microscopy observations. Despite relaxation, low-temperature photoluminescence measurements showed peaks at 6.7 μm and 5.8 μm, while photoconductance results showed strong spectral response up to 200 K, when the photoresponse onset was 8.6 μm.

AB - Strain-balanced type-II InAs/InAs1-xSbx superlattices with various compositions (x 0.22, 0.23, 0.37) and different layer thicknesses (tInAs 7 nm, tInAsSb 3.3, 2.3, 2.0 nm, respectively) have been grown by metalorganic chemical vapor deposition on GaSb substrates. X-ray diffraction revealed narrow satellite peaks (full-width-half-maximum of <100 arc sec), indicative of uniform superlattice periodicity and excellent crystallinity, which was also corroborated by cross-sectional transmission electron microscopy observations. Despite relaxation, low-temperature photoluminescence measurements showed peaks at 6.7 μm and 5.8 μm, while photoconductance results showed strong spectral response up to 200 K, when the photoresponse onset was 8.6 μm.

UR - http://www.scopus.com/inward/record.url?scp=80052101281&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052101281&partnerID=8YFLogxK

U2 - 10.1063/1.3625429

DO - 10.1063/1.3625429

M3 - Article

AN - SCOPUS:80052101281

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071111

ER -

Structural and optical characterization of type-II InAs/InAs _1-xSb_x superlattices grown by metalorganic chemical vapor deposition

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this