Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition

E. H. Steenbergen, Y. Huang, J. H. Ryou, L. Ouyang, J. J. Li, David Smith, R. D. Dupuis, Y. H. Zhang

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25 Scopus citations

Abstract

Strain-balanced type-II InAs/InAs1-xSbx superlattices with various compositions (x 0.22, 0.23, 0.37) and different layer thicknesses (tInAs 7 nm, tInAsSb 3.3, 2.3, 2.0 nm, respectively) have been grown by metalorganic chemical vapor deposition on GaSb substrates. X-ray diffraction revealed narrow satellite peaks (full-width-half-maximum of <100 arc sec), indicative of uniform superlattice periodicity and excellent crystallinity, which was also corroborated by cross-sectional transmission electron microscopy observations. Despite relaxation, low-temperature photoluminescence measurements showed peaks at 6.7 μm and 5.8 μm, while photoconductance results showed strong spectral response up to 200 K, when the photoresponse onset was 8.6 μm.

Original languageEnglish (US)
Article number071111
JournalApplied Physics Letters
Volume99
Issue number7
DOIs
StatePublished - Aug 15 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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