Structural and optical characterization of nonpolar GaN/AlN quantum wells

H. M. Ng, A. Bell, Fernando Ponce, S. N G Chu

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Abstract

Structural and optical characterization of nonpolar GaN/AlN quantum wells were presented. Multiple quantum wells were grown by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction results showed that the 18-Å GaN quantum wells exhibited luminescence at 326 nm.

Original languageEnglish (US)
Pages (from-to)653-655
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number4
DOIs
Publication statusPublished - Jul 28 2003

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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