Structural and optical characterization of nonpolar GaN/AlN quantum wells were presented. Multiple quantum wells were grown by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction results showed that the 18-Å GaN quantum wells exhibited luminescence at 326 nm.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Jul 28 2003|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)