Structural and optical characterization of nonpolar GaN/AlN quantum wells

H. M. Ng; A. Bell; Fernando Ponce; S. N G Chu

doi:10.1063/1.1595154

Structural and optical characterization of nonpolar GaN/AlN quantum wells

H. M. Ng, A. Bell, Fernando Ponce, S. N G Chu

Physics

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42 Scopus citations

Abstract

Structural and optical characterization of nonpolar GaN/AlN quantum wells were presented. Multiple quantum wells were grown by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction results showed that the 18-Å GaN quantum wells exhibited luminescence at 326 nm.

Original language	English (US)
Pages (from-to)	653-655
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.1595154
State	Published - Jul 28 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{b34080ef25374ad9b88ae4c1ddc77a6a,

title = "Structural and optical characterization of nonpolar GaN/AlN quantum wells",

abstract = "Structural and optical characterization of nonpolar GaN/AlN quantum wells were presented. Multiple quantum wells were grown by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction results showed that the 18-{\AA} GaN quantum wells exhibited luminescence at 326 nm.",

author = "Ng, {H. M.} and A. Bell and Fernando Ponce and Chu, {S. N G}",

year = "2003",

month = jul,

day = "28",

doi = "10.1063/1.1595154",

language = "English (US)",

volume = "83",

pages = "653--655",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Structural and optical characterization of nonpolar GaN/AlN quantum wells

AU - Ng, H. M.

AU - Bell, A.

AU - Ponce, Fernando

AU - Chu, S. N G

PY - 2003/7/28

Y1 - 2003/7/28

N2 - Structural and optical characterization of nonpolar GaN/AlN quantum wells were presented. Multiple quantum wells were grown by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction results showed that the 18-Å GaN quantum wells exhibited luminescence at 326 nm.

AB - Structural and optical characterization of nonpolar GaN/AlN quantum wells were presented. Multiple quantum wells were grown by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction results showed that the 18-Å GaN quantum wells exhibited luminescence at 326 nm.

UR - http://www.scopus.com/inward/record.url?scp=0042513832&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042513832&partnerID=8YFLogxK

U2 - 10.1063/1.1595154

DO - 10.1063/1.1595154

M3 - Article

AN - SCOPUS:0042513832

SN - 0003-6951

VL - 83

SP - 653

EP - 655

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Structural and optical characterization of nonpolar GaN/AlN quantum wells

Abstract

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