Abstract

We present results on structural and compositional changes in {\rm Ge}-{\rm x}{\rm Se}-{1-{\rm x}} chalcogenide glasses under {\rm Ar}^ + ion irradiation as a function of fluence and ion energies. Energy dispersive X-Ray spectroscopy (EDS) data obtained in this paper shows that the interaction with ions results in the loss of Ge atoms in Se-rich films. The compositional changes affect the structure of the films, which was manifested in differences observed in the Raman spectra. Ion interaction with of the films at the studied energies does affect the surface properties. Simulation of the penetration depth of the ions using Transport of Ions in Matter (TRIM) software shows that the interaction of incident {\rm Ar}^ + ions with the chalcogenide glass occurs within the top 5-nm film thickness, with an etch rate for 450-eV ion energy of approximately 5 nm/s. We suggest the application of this effect for the formation of Redox Conductive Bridge Memory (RCBM) device arrays for which electrical characteristics are presented and discussed.

Original languageEnglish (US)
Article number6966815
Pages (from-to)2855-2861
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number6
DOIs
StatePublished - Dec 1 2014

Fingerprint

Ion bombardment
ion irradiation
Glass
Thin films
glass
Ions
thin films
ions
energy
interactions
surface properties
Surface properties
Film thickness
Raman scattering
Energy dispersive spectroscopy
fluence
film thickness
penetration
Raman spectra
computer programs

Keywords

  • CBRAM
  • chalcogenide glasses
  • ion beam radiation
  • memristor array fabrication
  • memristors
  • PMC
  • radiation-induced effects
  • TRIM simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Nichol, T., Latif, M. R., Ailavajhala, M. S., Tenne, D. A., Gonzalez Velo, Y., Barnaby, H., ... Mitkova, M. (2014). Structural and material changes in thin film chalcogenide glasses under Ar-Ion irradiation. IEEE Transactions on Nuclear Science, 61(6), 2855-2861. [6966815]. https://doi.org/10.1109/TNS.2014.2367578

Structural and material changes in thin film chalcogenide glasses under Ar-Ion irradiation. / Nichol, Tyler; Latif, Muhammad Rizwan; Ailavajhala, Mahesh S.; Tenne, Dmitri A.; Gonzalez Velo, Yago; Barnaby, Hugh; Kozicki, Michael; Mitkova, Maria.

In: IEEE Transactions on Nuclear Science, Vol. 61, No. 6, 6966815, 01.12.2014, p. 2855-2861.

Research output: Contribution to journalArticle

Nichol, T, Latif, MR, Ailavajhala, MS, Tenne, DA, Gonzalez Velo, Y, Barnaby, H, Kozicki, M & Mitkova, M 2014, 'Structural and material changes in thin film chalcogenide glasses under Ar-Ion irradiation', IEEE Transactions on Nuclear Science, vol. 61, no. 6, 6966815, pp. 2855-2861. https://doi.org/10.1109/TNS.2014.2367578
Nichol, Tyler ; Latif, Muhammad Rizwan ; Ailavajhala, Mahesh S. ; Tenne, Dmitri A. ; Gonzalez Velo, Yago ; Barnaby, Hugh ; Kozicki, Michael ; Mitkova, Maria. / Structural and material changes in thin film chalcogenide glasses under Ar-Ion irradiation. In: IEEE Transactions on Nuclear Science. 2014 ; Vol. 61, No. 6. pp. 2855-2861.
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