Abstract
Alloy films of Ti and up to 20% Zr were prepared by codeposition onto Si(111) surfaces in ultrahigh vacuum. After in situ thermal annealing at temperatures of ∼600°C, the films form the C49 phase and are stable in this phase up to at least 910°C. In contrast, Ti films on Si(111) initially react to form the C49 phase and transform to the C54 phase at ∼700°C. The surfaces of the (Ti0.9Zr0.1)Si2 alloy films are studied by atomic force microscopy and are shown to be smoother than the surfaces of TiSi2 films on Si substrates. In addition the tendency to island formation is also not observed for annealing temperatures less than 910°C. The sheet resistivity of the (Ti0.9Zr0.1) Si2 alloy films is found to be ∼46 μΩ cm for annealing temperatures from 600 to 910°C.
Original language | English (US) |
---|---|
Pages (from-to) | 2413-2415 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 19 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Structural and electrical properties of (Ti0.9Zr 0.1)Si2 thin films on Si(111). / Dao, Y.; Edwards, A. M.; Ying, H.; Chen, Y. L.; Sayers, D. E.; Nemanich, Robert.
In: Applied Physics Letters, Vol. 65, No. 19, 1994, p. 2413-2415.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structural and electrical properties of (Ti0.9Zr 0.1)Si2 thin films on Si(111)
AU - Dao, Y.
AU - Edwards, A. M.
AU - Ying, H.
AU - Chen, Y. L.
AU - Sayers, D. E.
AU - Nemanich, Robert
PY - 1994
Y1 - 1994
N2 - Alloy films of Ti and up to 20% Zr were prepared by codeposition onto Si(111) surfaces in ultrahigh vacuum. After in situ thermal annealing at temperatures of ∼600°C, the films form the C49 phase and are stable in this phase up to at least 910°C. In contrast, Ti films on Si(111) initially react to form the C49 phase and transform to the C54 phase at ∼700°C. The surfaces of the (Ti0.9Zr0.1)Si2 alloy films are studied by atomic force microscopy and are shown to be smoother than the surfaces of TiSi2 films on Si substrates. In addition the tendency to island formation is also not observed for annealing temperatures less than 910°C. The sheet resistivity of the (Ti0.9Zr0.1) Si2 alloy films is found to be ∼46 μΩ cm for annealing temperatures from 600 to 910°C.
AB - Alloy films of Ti and up to 20% Zr were prepared by codeposition onto Si(111) surfaces in ultrahigh vacuum. After in situ thermal annealing at temperatures of ∼600°C, the films form the C49 phase and are stable in this phase up to at least 910°C. In contrast, Ti films on Si(111) initially react to form the C49 phase and transform to the C54 phase at ∼700°C. The surfaces of the (Ti0.9Zr0.1)Si2 alloy films are studied by atomic force microscopy and are shown to be smoother than the surfaces of TiSi2 films on Si substrates. In addition the tendency to island formation is also not observed for annealing temperatures less than 910°C. The sheet resistivity of the (Ti0.9Zr0.1) Si2 alloy films is found to be ∼46 μΩ cm for annealing temperatures from 600 to 910°C.
UR - http://www.scopus.com/inward/record.url?scp=5244263606&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=5244263606&partnerID=8YFLogxK
U2 - 10.1063/1.112692
DO - 10.1063/1.112692
M3 - Article
AN - SCOPUS:5244263606
VL - 65
SP - 2413
EP - 2415
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 19
ER -