Structural and electrical properties of (Ti0.9Zr 0.1)Si2 thin films on Si(111)

Y. Dao, A. M. Edwards, H. Ying, Y. L. Chen, D. E. Sayers, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Alloy films of Ti and up to 20% Zr were prepared by codeposition onto Si(111) surfaces in ultrahigh vacuum. After in situ thermal annealing at temperatures of ∼600°C, the films form the C49 phase and are stable in this phase up to at least 910°C. In contrast, Ti films on Si(111) initially react to form the C49 phase and transform to the C54 phase at ∼700°C. The surfaces of the (Ti0.9Zr0.1)Si2 alloy films are studied by atomic force microscopy and are shown to be smoother than the surfaces of TiSi2 films on Si substrates. In addition the tendency to island formation is also not observed for annealing temperatures less than 910°C. The sheet resistivity of the (Ti0.9Zr0.1) Si2 alloy films is found to be ∼46 μΩ cm for annealing temperatures from 600 to 910°C.

Original languageEnglish (US)
Pages (from-to)2413-2415
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number19
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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