Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy

N. Izyumskaya, V. Avrutin, X. Gu, B. Xiao, S. Chevtchenko, J. G. Yoon, H. Morko̧, Lin Zhou, David Smith

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Abstract

Single-crystal, single-phase Pb (Zrx Ti1-x) O3 films (x=0-0.4) were grown on (001) SrTi O3 and SrTiO3:Nb substrates by molecular beam epitaxy. Layer-by-layer growth of the Pb (Zr,Ti) O3 films was achieved by using PbTi O3 buffer layers between the SrTi O3 substrates and the Pb (Zr,Ti) O3 films. The layers with low Zr content showed high crystallinity with full width at half maximum of ω -rocking curves as low as 4 arc min, whereas increase in Zr concentration led to pronounced angular broadening. The Pb Zr0.07 Ti0.93 O3 films exhibited remanent polarization as high as 83 μC cm2, but local areas suffered from nonuniform leakage current.

Original languageEnglish (US)
Article number182906
JournalApplied Physics Letters
Volume91
Issue number18
DOIs
StatePublished - Nov 7 2007

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Izyumskaya, N., Avrutin, V., Gu, X., Xiao, B., Chevtchenko, S., Yoon, J. G., Morko̧, H., Zhou, L., & Smith, D. (2007). Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy. Applied Physics Letters, 91(18), [182906]. https://doi.org/10.1063/1.2804571