Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy

N. Izyumskaya; V. Avrutin; X. Gu; B. Xiao; S. Chevtchenko; J. G. Yoon; H. Morko̧; Lin Zhou; David Smith

doi:10.1063/1.2804571

Structural and electrical properties of Pb(Zr,Ti)O₃ films grown by molecular beam epitaxy

N. Izyumskaya, V. Avrutin, X. Gu, B. Xiao, S. Chevtchenko, J. G. Yoon, H. Morko̧, Lin Zhou, David Smith

Research output: Contribution to journal › Article › peer-review

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Abstract

Single-crystal, single-phase Pb (Zrx Ti1-x) O3 films (x=0-0.4) were grown on (001) SrTi O3 and SrTiO3:Nb substrates by molecular beam epitaxy. Layer-by-layer growth of the Pb (Zr,Ti) O3 films was achieved by using PbTi O3 buffer layers between the SrTi O3 substrates and the Pb (Zr,Ti) O3 films. The layers with low Zr content showed high crystallinity with full width at half maximum of ω -rocking curves as low as 4 arc min, whereas increase in Zr concentration led to pronounced angular broadening. The Pb Zr0.07 Ti0.93 O3 films exhibited remanent polarization as high as 83 μC cm2, but local areas suffered from nonuniform leakage current.

Original language	English (US)
Article number	182906
Journal	Applied Physics Letters
Volume	91
Issue number	18
DOIs	https://doi.org/10.1063/1.2804571
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{ebe12a8e7e0342129e830d24066c9ec2,

title = "Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy",

abstract = "Single-crystal, single-phase Pb (Zrx Ti1-x) O3 films (x=0-0.4) were grown on (001) SrTi O3 and SrTiO3:Nb substrates by molecular beam epitaxy. Layer-by-layer growth of the Pb (Zr,Ti) O3 films was achieved by using PbTi O3 buffer layers between the SrTi O3 substrates and the Pb (Zr,Ti) O3 films. The layers with low Zr content showed high crystallinity with full width at half maximum of ω -rocking curves as low as 4 arc min, whereas increase in Zr concentration led to pronounced angular broadening. The Pb Zr0.07 Ti0.93 O3 films exhibited remanent polarization as high as 83 μC cm2, but local areas suffered from nonuniform leakage current.",

author = "N. Izyumskaya and V. Avrutin and X. Gu and B. Xiao and S. Chevtchenko and Yoon, {J. G.} and H. Mork{\c o} and Lin Zhou and David Smith",

note = "Funding Information: This work was supported by a grant from the Office of Naval Research under the direction of Dr. C. E. C. Wood. We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. ",

year = "2007",

doi = "10.1063/1.2804571",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy

AU - Izyumskaya, N.

AU - Avrutin, V.

AU - Gu, X.

AU - Xiao, B.

AU - Chevtchenko, S.

AU - Yoon, J. G.

AU - Morko̧, H.

AU - Zhou, Lin

AU - Smith, David

N1 - Funding Information: This work was supported by a grant from the Office of Naval Research under the direction of Dr. C. E. C. Wood. We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2007

Y1 - 2007

N2 - Single-crystal, single-phase Pb (Zrx Ti1-x) O3 films (x=0-0.4) were grown on (001) SrTi O3 and SrTiO3:Nb substrates by molecular beam epitaxy. Layer-by-layer growth of the Pb (Zr,Ti) O3 films was achieved by using PbTi O3 buffer layers between the SrTi O3 substrates and the Pb (Zr,Ti) O3 films. The layers with low Zr content showed high crystallinity with full width at half maximum of ω -rocking curves as low as 4 arc min, whereas increase in Zr concentration led to pronounced angular broadening. The Pb Zr0.07 Ti0.93 O3 films exhibited remanent polarization as high as 83 μC cm2, but local areas suffered from nonuniform leakage current.

AB - Single-crystal, single-phase Pb (Zrx Ti1-x) O3 films (x=0-0.4) were grown on (001) SrTi O3 and SrTiO3:Nb substrates by molecular beam epitaxy. Layer-by-layer growth of the Pb (Zr,Ti) O3 films was achieved by using PbTi O3 buffer layers between the SrTi O3 substrates and the Pb (Zr,Ti) O3 films. The layers with low Zr content showed high crystallinity with full width at half maximum of ω -rocking curves as low as 4 arc min, whereas increase in Zr concentration led to pronounced angular broadening. The Pb Zr0.07 Ti0.93 O3 films exhibited remanent polarization as high as 83 μC cm2, but local areas suffered from nonuniform leakage current.

UR - http://www.scopus.com/inward/record.url?scp=35648977541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35648977541&partnerID=8YFLogxK

U2 - 10.1063/1.2804571

DO - 10.1063/1.2804571

M3 - Article

AN - SCOPUS:35648977541

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 182906

ER -

Structural and electrical properties of Pb(Zr,Ti)O₃ films grown by molecular beam epitaxy

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