Structural and electrical properties of Pb(Zr,Ti)O 3 thin films on GaN/Sapphire, Ru/Sapphire and Ru/GaN/Sapphire substrates

Sandwip Dey, S. Bhaskar, J. Goswami, W. Cao

Research output: Chapter in Book/Report/Conference proceedingChapter

10 Citations (Scopus)

Abstract

Lead zirconate titanate or Pb(Zr 0.3Ti 0.7)O 3 thin films were deposited on GaN, Ru/Sapphire and Ru/GaN/Sapphire substrates by the sol-gel technique. The Ru films, with a (002) preferred orientation, were deposited by metalorganic chemical vapor deposition (MOCVD) on Sapphire (0001) and GaN/Sapphire substrates. The properties of PZT on Ru films, rapid thermal annealed under different conditions, are investigated. The P-E hysteresis curves and C-V data for PZT films on Ru/GaN and Ru/Sapphire substrates were measured as a function of voltage and frequency. The Metal-Ferroelectric-Semiconductor (MFS or Pt/PZT/GaN) structures, prepared by depositing PZT thin films on n-type (Si doping ∼1 × 10 18 cm -3) and (0001)-GaN/Sapphire, were characterized for their dielectric properties. The PZT films on as-deposited Ru, as opposed to annealed Ru, exhibit improved properties; remnant polarization of 37 μC/cm 2, dielectric permittivity of 425 at 100 KHz, and leakage current density ∼1 × 10 -7 A/cm 2 at 1.5 V.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages69-78
Number of pages10
Volume60
DOIs
StatePublished - 2004

Fingerprint

Aluminum Oxide
Sapphire
Structural properties
sapphire
Electric properties
electrical properties
Thin films
Substrates
thin films
Metallorganic chemical vapor deposition
Leakage currents
Dielectric properties
Ferroelectric materials
Sol-gels
metalorganic chemical vapor deposition
Hysteresis
dielectric properties
leakage
Permittivity
Current density

Keywords

  • Ferroelectric
  • GaN
  • MOCVD
  • Pb(Zr Ti )O
  • Ru
  • Sol-gel

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Structural and electrical properties of Pb(Zr,Ti)O 3 thin films on GaN/Sapphire, Ru/Sapphire and Ru/GaN/Sapphire substrates . / Dey, Sandwip; Bhaskar, S.; Goswami, J.; Cao, W.

Integrated Ferroelectrics. Vol. 60 2004. p. 69-78.

Research output: Chapter in Book/Report/Conference proceedingChapter

Dey, Sandwip ; Bhaskar, S. ; Goswami, J. ; Cao, W. / Structural and electrical properties of Pb(Zr,Ti)O 3 thin films on GaN/Sapphire, Ru/Sapphire and Ru/GaN/Sapphire substrates Integrated Ferroelectrics. Vol. 60 2004. pp. 69-78
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abstract = "Lead zirconate titanate or Pb(Zr 0.3Ti 0.7)O 3 thin films were deposited on GaN, Ru/Sapphire and Ru/GaN/Sapphire substrates by the sol-gel technique. The Ru films, with a (002) preferred orientation, were deposited by metalorganic chemical vapor deposition (MOCVD) on Sapphire (0001) and GaN/Sapphire substrates. The properties of PZT on Ru films, rapid thermal annealed under different conditions, are investigated. The P-E hysteresis curves and C-V data for PZT films on Ru/GaN and Ru/Sapphire substrates were measured as a function of voltage and frequency. The Metal-Ferroelectric-Semiconductor (MFS or Pt/PZT/GaN) structures, prepared by depositing PZT thin films on n-type (Si doping ∼1 × 10 18 cm -3) and (0001)-GaN/Sapphire, were characterized for their dielectric properties. The PZT films on as-deposited Ru, as opposed to annealed Ru, exhibit improved properties; remnant polarization of 37 μC/cm 2, dielectric permittivity of 425 at 100 KHz, and leakage current density ∼1 × 10 -7 A/cm 2 at 1.5 V.",
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AU - Dey, Sandwip

AU - Bhaskar, S.

AU - Goswami, J.

AU - Cao, W.

PY - 2004

Y1 - 2004

N2 - Lead zirconate titanate or Pb(Zr 0.3Ti 0.7)O 3 thin films were deposited on GaN, Ru/Sapphire and Ru/GaN/Sapphire substrates by the sol-gel technique. The Ru films, with a (002) preferred orientation, were deposited by metalorganic chemical vapor deposition (MOCVD) on Sapphire (0001) and GaN/Sapphire substrates. The properties of PZT on Ru films, rapid thermal annealed under different conditions, are investigated. The P-E hysteresis curves and C-V data for PZT films on Ru/GaN and Ru/Sapphire substrates were measured as a function of voltage and frequency. The Metal-Ferroelectric-Semiconductor (MFS or Pt/PZT/GaN) structures, prepared by depositing PZT thin films on n-type (Si doping ∼1 × 10 18 cm -3) and (0001)-GaN/Sapphire, were characterized for their dielectric properties. The PZT films on as-deposited Ru, as opposed to annealed Ru, exhibit improved properties; remnant polarization of 37 μC/cm 2, dielectric permittivity of 425 at 100 KHz, and leakage current density ∼1 × 10 -7 A/cm 2 at 1.5 V.

AB - Lead zirconate titanate or Pb(Zr 0.3Ti 0.7)O 3 thin films were deposited on GaN, Ru/Sapphire and Ru/GaN/Sapphire substrates by the sol-gel technique. The Ru films, with a (002) preferred orientation, were deposited by metalorganic chemical vapor deposition (MOCVD) on Sapphire (0001) and GaN/Sapphire substrates. The properties of PZT on Ru films, rapid thermal annealed under different conditions, are investigated. The P-E hysteresis curves and C-V data for PZT films on Ru/GaN and Ru/Sapphire substrates were measured as a function of voltage and frequency. The Metal-Ferroelectric-Semiconductor (MFS or Pt/PZT/GaN) structures, prepared by depositing PZT thin films on n-type (Si doping ∼1 × 10 18 cm -3) and (0001)-GaN/Sapphire, were characterized for their dielectric properties. The PZT films on as-deposited Ru, as opposed to annealed Ru, exhibit improved properties; remnant polarization of 37 μC/cm 2, dielectric permittivity of 425 at 100 KHz, and leakage current density ∼1 × 10 -7 A/cm 2 at 1.5 V.

KW - Ferroelectric

KW - GaN

KW - MOCVD

KW - Pb(Zr Ti )O

KW - Ru

KW - Sol-gel

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