Structural and electrical properties of epitaxial YBCO films on Si

D. K. Fork, A. Barrera, Julia M. Phillips, Nathan Newman, D. B. Fenner, T. H. Geballe, G. A N Connell, J. B. Boyce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Efforts to grow high quality films of YBCO on Si have been discussed. Ion channeling reveals a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12% on either silicon or SOS. It is possible to produce YBCO films with structural and DC electrical properties which rival the most optimized c-axis epitaxial YBCO films on MgO, SrTiO 3 and LaAlO 3. Preliminary measurements of microwave properties appear promising.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsRajendra Singh, J. Narayan, David T. Shaw
PublisherPubl by Int Soc for Optical Engineering
Pages202
Number of pages1
Volume1394
StatePublished - 1991
Externally publishedYes
EventProgress in High-Temperature Superconducting Transistors and Other Devices - Santa Clara, CA, USA
Duration: Oct 4 1990Oct 5 1990

Other

OtherProgress in High-Temperature Superconducting Transistors and Other Devices
CitySanta Clara, CA, USA
Period10/4/9010/5/90

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Fork, D. K., Barrera, A., Phillips, J. M., Newman, N., Fenner, D. B., Geballe, T. H., Connell, G. A. N., & Boyce, J. B. (1991). Structural and electrical properties of epitaxial YBCO films on Si. In R. Singh, J. Narayan, & D. T. Shaw (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1394, pp. 202). Publ by Int Soc for Optical Engineering.