Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures

S. Horst; S. Chatterjee; K. Hantke; P. J. Klar; I. Nemeth; W. Stolz; K. Volz; C. Bückers; A. Thränhardt; S. W. Koch; G. Blume; G. Weiser; W. Rühle; Shane Johnson; J. B. Wang; Yong-Hang Zhang

doi:10.1109/CLEO.2007.4452599

Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures

S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, G. Blume, G. Weiser, W. Rühle, Shane Johnson, J. B. Wang, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs	https://doi.org/10.1109/CLEO.2007.4452599
State	Published - 2007
Event	Conference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States Duration: May 6 2007 → May 11 2007

Publication series

Name	Conference on Lasers and Electro-Optics, 2007, CLEO 2007

Other

Other	Conference on Lasers and Electro-Optics, 2007, CLEO 2007
Country/Territory	United States
City	Baltimore, MD
Period	5/6/07 → 5/11/07

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1109/CLEO.2007.4452599

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Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Nemeth, I., Stolz, W., Volz, K., Bückers, C., Thränhardt, A., Koch, S. W., Blume, G., Weiser, G., Rühle, W., Johnson, S., Wang, J. B., & Zhang, Y.-H. (2007). Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures. In Conference on Lasers and Electro-Optics, 2007, CLEO 2007 Article 4452599 (Conference on Lasers and Electro-Optics, 2007, CLEO 2007). https://doi.org/10.1109/CLEO.2007.4452599

Horst, S, Chatterjee, S, Hantke, K, Klar, PJ, Nemeth, I, Stolz, W, Volz, K, Bückers, C, Thränhardt, A, Koch, SW, Blume, G, Weiser, G, Rühle, W, Johnson, S, Wang, JB & Zhang, Y-H 2007, Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures. in Conference on Lasers and Electro-Optics, 2007, CLEO 2007., 4452599, Conference on Lasers and Electro-Optics, 2007, CLEO 2007, Conference on Lasers and Electro-Optics, 2007, CLEO 2007, Baltimore, MD, United States, 5/6/07. https://doi.org/10.1109/CLEO.2007.4452599

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title = "Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures",

abstract = "We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.",

author = "S. Horst and S. Chatterjee and K. Hantke and Klar, {P. J.} and I. Nemeth and W. Stolz and K. Volz and C. B{\"u}ckers and A. Thr{\"a}nhardt and Koch, {S. W.} and G. Blume and G. Weiser and W. R{\"u}hle and Shane Johnson and Wang, {J. B.} and Yong-Hang Zhang",

year = "2007",

doi = "10.1109/CLEO.2007.4452599",

language = "English (US)",

isbn = "9781557528346",

series = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007",

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T1 - Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures

AU - Horst, S.

AU - Chatterjee, S.

AU - Hantke, K.

AU - Klar, P. J.

AU - Nemeth, I.

AU - Stolz, W.

AU - Volz, K.

AU - Bückers, C.

AU - Thränhardt, A.

AU - Koch, S. W.

AU - Blume, G.

AU - Weiser, G.

AU - Rühle, W.

AU - Johnson, Shane

AU - Wang, J. B.

AU - Zhang, Yong-Hang

PY - 2007

Y1 - 2007

N2 - We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.

AB - We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.

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UR - http://www.scopus.com/inward/citedby.url?scp=82955164002&partnerID=8YFLogxK

U2 - 10.1109/CLEO.2007.4452599

DO - 10.1109/CLEO.2007.4452599

M3 - Conference contribution

AN - SCOPUS:82955164002

SN - 9781557528346

T3 - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

BT - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

T2 - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

Y2 - 6 May 2007 through 11 May 2007

ER -

Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures

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