Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures

S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, G. Blume, G. Weiser, W. Rühle, Shane Johnson, J. B. Wang, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
StatePublished - 2007
EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States
Duration: May 6 2007May 11 2007

Other

OtherConference on Lasers and Electro-Optics, 2007, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period5/6/075/11/07

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Algae
Semiconductor quantum wells
Heterojunctions
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Nemeth, I., Stolz, W., ... Zhang, Y-H. (2007). Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures. In Conference on Lasers and Electro-Optics, 2007, CLEO 2007 [4452599] https://doi.org/10.1109/CLEO.2007.4452599

Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures. / Horst, S.; Chatterjee, S.; Hantke, K.; Klar, P. J.; Nemeth, I.; Stolz, W.; Volz, K.; Bückers, C.; Thränhardt, A.; Koch, S. W.; Blume, G.; Weiser, G.; Rühle, W.; Johnson, Shane; Wang, J. B.; Zhang, Yong-Hang.

Conference on Lasers and Electro-Optics, 2007, CLEO 2007. 2007. 4452599.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horst, S, Chatterjee, S, Hantke, K, Klar, PJ, Nemeth, I, Stolz, W, Volz, K, Bückers, C, Thränhardt, A, Koch, SW, Blume, G, Weiser, G, Rühle, W, Johnson, S, Wang, JB & Zhang, Y-H 2007, Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures. in Conference on Lasers and Electro-Optics, 2007, CLEO 2007., 4452599, Conference on Lasers and Electro-Optics, 2007, CLEO 2007, Baltimore, MD, United States, 5/6/07. https://doi.org/10.1109/CLEO.2007.4452599
Horst S, Chatterjee S, Hantke K, Klar PJ, Nemeth I, Stolz W et al. Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures. In Conference on Lasers and Electro-Optics, 2007, CLEO 2007. 2007. 4452599 https://doi.org/10.1109/CLEO.2007.4452599
Horst, S. ; Chatterjee, S. ; Hantke, K. ; Klar, P. J. ; Nemeth, I. ; Stolz, W. ; Volz, K. ; Bückers, C. ; Thränhardt, A. ; Koch, S. W. ; Blume, G. ; Weiser, G. ; Rühle, W. ; Johnson, Shane ; Wang, J. B. ; Zhang, Yong-Hang. / Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures. Conference on Lasers and Electro-Optics, 2007, CLEO 2007. 2007.
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AU - Horst, S.

AU - Chatterjee, S.

AU - Hantke, K.

AU - Klar, P. J.

AU - Nemeth, I.

AU - Stolz, W.

AU - Volz, K.

AU - Bückers, C.

AU - Thränhardt, A.

AU - Koch, S. W.

AU - Blume, G.

AU - Weiser, G.

AU - Rühle, W.

AU - Johnson, Shane

AU - Wang, J. B.

AU - Zhang, Yong-Hang

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