Abstract

Stress-induced cleavage was investigated as a method of transferring sizable areas of thin layers of silicon onto alternative substrates such as sapphire and flexible substrates. By bonding bulk silicon to a sapphire handle wafer using the polymer SU-8, an ultrathin layer of silicon can be transferred from the donor substrate onto the sapphire via mechanical cleavage. The thickness of the transferred silicon is essentially determined by the processing steps and the elastic properties of the composite structure. We further show that a double-flip process enables the complete transfer of ultrathin Si onto flexible substrates.

Original languageEnglish (US)
Pages (from-to)H171-H173
JournalElectrochemical and Solid-State Letters
Volume14
Issue number4
DOIs
StatePublished - Feb 28 2011

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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