Stress-enhanced dislocation density reduction in multicrystalline silicon

M. I. Bertoni, D. M. Powell, M. L. Vogl, S. Castellanos, A. Fecych, T. Buonassisi

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Stress is generally perceived to be detrimental for multicrystalline silicon (mc-Si), leading to dislocation multiplication during crystal growth and processing. Herein, we evaluate the role of stress as a driving force for dislocation density reduction in mc-Si. At high temperatures, close to the melting point (>0.8Tm), we observe that the application of stress as well as the relief of residual stress, can modify the density of pre-existing dislocations in as-grown mc-Si under certain conditions, leading to a net local reduction of dislocation density. (

Original languageEnglish (US)
Pages (from-to)28-30
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume5
Issue number1
DOIs
StatePublished - Jan 1 2011
Externally publishedYes

    Fingerprint

Keywords

  • 3-point bending
  • Annealing
  • Dislocation density
  • Dislocations
  • High temperature
  • Si
  • Stress

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this