Stress-enhanced dislocation density reduction in multicrystalline silicon

Mariana Bertoni, D. M. Powell, M. L. Vogl, S. Castellanos, A. Fecych, T. Buonassisi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Stress is generally perceived to be detrimental for multicrystalline silicon (mc-Si), leading to dislocation multiplication during crystal growth and processing. Herein, we evaluate the role of stress as a driving force for dislocation density reduction in mc-Si. At high temperatures, close to the melting point (>0.8Tm), we observe that the application of stress as well as the relief of residual stress, can modify the density of pre-existing dislocations in as-grown mc-Si under certain conditions, leading to a net local reduction of dislocation density. (

Original languageEnglish (US)
Pages (from-to)28-30
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume5
Issue number1
DOIs
StatePublished - Jan 2011
Externally publishedYes

Fingerprint

Silicon
silicon
Crystallization
Dislocations (crystals)
Crystal growth
Melting point
Residual stresses
multiplication
residual stress
melting points
crystal growth
Processing
Temperature

Keywords

  • 3-point bending
  • Annealing
  • Dislocation density
  • Dislocations
  • High temperature
  • Si
  • Stress

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Stress-enhanced dislocation density reduction in multicrystalline silicon. / Bertoni, Mariana; Powell, D. M.; Vogl, M. L.; Castellanos, S.; Fecych, A.; Buonassisi, T.

In: Physica Status Solidi - Rapid Research Letters, Vol. 5, No. 1, 01.2011, p. 28-30.

Research output: Contribution to journalArticle

Bertoni, Mariana ; Powell, D. M. ; Vogl, M. L. ; Castellanos, S. ; Fecych, A. ; Buonassisi, T. / Stress-enhanced dislocation density reduction in multicrystalline silicon. In: Physica Status Solidi - Rapid Research Letters. 2011 ; Vol. 5, No. 1. pp. 28-30.
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