Stress-enhanced dislocation density reduction in multicrystalline silicon

M. I. Bertoni; D. M. Powell; M. L. Vogl; S. Castellanos; A. Fecych; T. Buonassisi

doi:10.1002/pssr.201004344

Stress-enhanced dislocation density reduction in multicrystalline silicon

M. I. Bertoni, D. M. Powell, M. L. Vogl, S. Castellanos, A. Fecych, T. Buonassisi

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Stress is generally perceived to be detrimental for multicrystalline silicon (mc-Si), leading to dislocation multiplication during crystal growth and processing. Herein, we evaluate the role of stress as a driving force for dislocation density reduction in mc-Si. At high temperatures, close to the melting point (>0.8T_m), we observe that the application of stress as well as the relief of residual stress, can modify the density of pre-existing dislocations in as-grown mc-Si under certain conditions, leading to a net local reduction of dislocation density. (

Original language	English (US)
Pages (from-to)	28-30
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	5
Issue number	1
DOIs	https://doi.org/10.1002/pssr.201004344
State	Published - Jan 2011
Externally published	Yes

Keywords

3-point bending
Annealing
Dislocation density
Dislocations
High temperature
Si
Stress

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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10.1002/pssr.201004344

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abstract = "Stress is generally perceived to be detrimental for multicrystalline silicon (mc-Si), leading to dislocation multiplication during crystal growth and processing. Herein, we evaluate the role of stress as a driving force for dislocation density reduction in mc-Si. At high temperatures, close to the melting point (>0.8Tm), we observe that the application of stress as well as the relief of residual stress, can modify the density of pre-existing dislocations in as-grown mc-Si under certain conditions, leading to a net local reduction of dislocation density. (",

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AU - Bertoni, M. I.

AU - Powell, D. M.

AU - Vogl, M. L.

AU - Castellanos, S.

AU - Fecych, A.

AU - Buonassisi, T.

PY - 2011/1

Y1 - 2011/1

N2 - Stress is generally perceived to be detrimental for multicrystalline silicon (mc-Si), leading to dislocation multiplication during crystal growth and processing. Herein, we evaluate the role of stress as a driving force for dislocation density reduction in mc-Si. At high temperatures, close to the melting point (>0.8Tm), we observe that the application of stress as well as the relief of residual stress, can modify the density of pre-existing dislocations in as-grown mc-Si under certain conditions, leading to a net local reduction of dislocation density. (

AB - Stress is generally perceived to be detrimental for multicrystalline silicon (mc-Si), leading to dislocation multiplication during crystal growth and processing. Herein, we evaluate the role of stress as a driving force for dislocation density reduction in mc-Si. At high temperatures, close to the melting point (>0.8Tm), we observe that the application of stress as well as the relief of residual stress, can modify the density of pre-existing dislocations in as-grown mc-Si under certain conditions, leading to a net local reduction of dislocation density. (

KW - 3-point bending

KW - Annealing

KW - Dislocation density

KW - Dislocations

KW - High temperature

KW - Si

KW - Stress

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Stress-enhanced dislocation density reduction in multicrystalline silicon

Abstract

Keywords

ASJC Scopus subject areas

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