Stress engineering in amorphous silicon thin films

Eric Johlin, Sebastián Castro-Galnares, Amir Abdallah, Nouar Tabet, Mariana Bertoni, Tesleem Asafa, Jeffrey C. Grossman, Said Sayed, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low hole mobility severely limits the conversion efficiencies of amorphous silicon (a-Si) solar cells. Previously it has been proposed that carrier mobility can be improved by introducing certain types of stress into thin films. In this work we explore a range of deposition conditions allowing the formation of intrinsic stresses varying from -924 MPa compressive to 386 MPa tensile. We then discuss the origins of these stresses due to ion bombardment, presenting a model correlating our deposition parameters with our observed stress measurements. In doing so we elucidate the non-linear relationship between deposition pressure and the films intrinsic stress.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages176-178
Number of pages3
DOIs
StatePublished - 2011
Externally publishedYes
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: Jun 19 2011Jun 24 2011

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period6/19/116/24/11

Fingerprint

Amorphous silicon
Thin films
Hole mobility
Stress measurement
Carrier mobility
Silicon solar cells
Ion bombardment
Conversion efficiency

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Johlin, E., Castro-Galnares, S., Abdallah, A., Tabet, N., Bertoni, M., Asafa, T., ... Buonassisi, T. (2011). Stress engineering in amorphous silicon thin films. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 176-178). [6185874] https://doi.org/10.1109/PVSC.2011.6185874

Stress engineering in amorphous silicon thin films. / Johlin, Eric; Castro-Galnares, Sebastián; Abdallah, Amir; Tabet, Nouar; Bertoni, Mariana; Asafa, Tesleem; Grossman, Jeffrey C.; Sayed, Said; Buonassisi, Tonio.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 176-178 6185874.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Johlin, E, Castro-Galnares, S, Abdallah, A, Tabet, N, Bertoni, M, Asafa, T, Grossman, JC, Sayed, S & Buonassisi, T 2011, Stress engineering in amorphous silicon thin films. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6185874, pp. 176-178, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 6/19/11. https://doi.org/10.1109/PVSC.2011.6185874
Johlin E, Castro-Galnares S, Abdallah A, Tabet N, Bertoni M, Asafa T et al. Stress engineering in amorphous silicon thin films. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 176-178. 6185874 https://doi.org/10.1109/PVSC.2011.6185874
Johlin, Eric ; Castro-Galnares, Sebastián ; Abdallah, Amir ; Tabet, Nouar ; Bertoni, Mariana ; Asafa, Tesleem ; Grossman, Jeffrey C. ; Sayed, Said ; Buonassisi, Tonio. / Stress engineering in amorphous silicon thin films. Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. pp. 176-178
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