TY - GEN
T1 - Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon
AU - Castellanos, Sergio
AU - Bertoni, Mariana I.
AU - Vogl, Michelle
AU - Fecych, Alexandria
AU - Buonassisi, Tonio
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - In multicrystalline silicon (mc-Si), the presence of dislocation-rich areas limits solar cell conversion efficiencies [1-2]. Previous studies have demonstrated that dislocation densities higher than 106 cm -2 can dramatically decrease the minority carrier lifetime [3]. High dislocation densities, and their decoration with impurities, can limit minority carrier lifetime even after phosphorous diffusion or hydrogen passivation [4-5]. We previously proposed a method to remove dislocations from mc-Si by high-temperature annealing, demonstrating dislocation density reductions of 95% approximately [6]. We demonstrated that the dependence of dislocation density reduction on annealing temperature is much more pronounced that the dependence on annealing time [7]. In this contribution, we propose stress as an additional mechanism to enhance dislocation density reduction. We discuss the relationship between temperature, stresses and dislocation density in string ribbon.
AB - In multicrystalline silicon (mc-Si), the presence of dislocation-rich areas limits solar cell conversion efficiencies [1-2]. Previous studies have demonstrated that dislocation densities higher than 106 cm -2 can dramatically decrease the minority carrier lifetime [3]. High dislocation densities, and their decoration with impurities, can limit minority carrier lifetime even after phosphorous diffusion or hydrogen passivation [4-5]. We previously proposed a method to remove dislocations from mc-Si by high-temperature annealing, demonstrating dislocation density reductions of 95% approximately [6]. We demonstrated that the dependence of dislocation density reduction on annealing temperature is much more pronounced that the dependence on annealing time [7]. In this contribution, we propose stress as an additional mechanism to enhance dislocation density reduction. We discuss the relationship between temperature, stresses and dislocation density in string ribbon.
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U2 - 10.1109/PVSC.2010.5616893
DO - 10.1109/PVSC.2010.5616893
M3 - Conference contribution
AN - SCOPUS:78650136365
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 357
EP - 358
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -