Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon

Sergio Castellanos, Mariana Bertoni, Michelle Vogl, Alexandria Fecych, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In multicrystalline silicon (mc-Si), the presence of dislocation-rich areas limits solar cell conversion efficiencies [1-2]. Previous studies have demonstrated that dislocation densities higher than 106 cm -2 can dramatically decrease the minority carrier lifetime [3]. High dislocation densities, and their decoration with impurities, can limit minority carrier lifetime even after phosphorous diffusion or hydrogen passivation [4-5]. We previously proposed a method to remove dislocations from mc-Si by high-temperature annealing, demonstrating dislocation density reductions of 95% approximately [6]. We demonstrated that the dependence of dislocation density reduction on annealing temperature is much more pronounced that the dependence on annealing time [7]. In this contribution, we propose stress as an additional mechanism to enhance dislocation density reduction. We discuss the relationship between temperature, stresses and dislocation density in string ribbon.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages357-358
Number of pages2
DOIs
StatePublished - 2010
Externally publishedYes
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

Fingerprint

Carrier lifetime
Annealing
Silicon
Passivation
Temperature
Conversion efficiency
Solar cells
Impurities
Hydrogen

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Castellanos, S., Bertoni, M., Vogl, M., Fecych, A., & Buonassisi, T. (2010). Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 357-358). [5616893] https://doi.org/10.1109/PVSC.2010.5616893

Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon. / Castellanos, Sergio; Bertoni, Mariana; Vogl, Michelle; Fecych, Alexandria; Buonassisi, Tonio.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 357-358 5616893.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Castellanos, S, Bertoni, M, Vogl, M, Fecych, A & Buonassisi, T 2010, Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon. in Conference Record of the IEEE Photovoltaic Specialists Conference., 5616893, pp. 357-358, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5616893
Castellanos S, Bertoni M, Vogl M, Fecych A, Buonassisi T. Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 357-358. 5616893 https://doi.org/10.1109/PVSC.2010.5616893
Castellanos, Sergio ; Bertoni, Mariana ; Vogl, Michelle ; Fecych, Alexandria ; Buonassisi, Tonio. / Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon. Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. pp. 357-358
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