Strategies for the synthesis of highly concentrated Si1-yCy diamond-structured systems

D. Chandrasekhar, J. McMurran, David Smith, John Kouvetakis, J. D. Lorentzen, Jose Menendez

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCy thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-740°C using gas mixtures of SiH4 with C(SiH3)4 or C(SiH2Cl)4, which are (C-H)-free precursors incorporating Si4C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH4 to the gas mixture had a remarkable effect on growth rates and film crystallinity.

Original languageEnglish (US)
Pages (from-to)2117-2119
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number17
DOIs
StatePublished - Dec 1 1998

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this