Strategies for the synthesis of highly concentrated Si1-yCy diamond-structured systems

D. Chandrasekhar, J. McMurran, David Smith, John Kouvetakis, J. D. Lorentzen, Jose Menendez

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCy thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-740°C using gas mixtures of SiH4 with C(SiH3)4 or C(SiH2Cl)4, which are (C-H)-free precursors incorporating Si4C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH4 to the gas mixture had a remarkable effect on growth rates and film crystallinity.

Original languageEnglish (US)
Pages (from-to)2117-2119
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number17
DOIs
StatePublished - 1998

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gas mixtures
diamonds
carbon
synthesis
tetrahedrons
spectroscopy
ultrahigh vacuum
crystallinity
backscattering
Raman spectroscopy
infrared spectroscopy
deposits
vapor deposition
chemistry
transmission electron microscopy
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Strategies for the synthesis of highly concentrated Si1-yCy diamond-structured systems. / Chandrasekhar, D.; McMurran, J.; Smith, David; Kouvetakis, John; Lorentzen, J. D.; Menendez, Jose.

In: Applied Physics Letters, Vol. 72, No. 17, 1998, p. 2117-2119.

Research output: Contribution to journalArticle

@article{8e63a20c03d345bba9c9439d117e53fb,
title = "Strategies for the synthesis of highly concentrated Si1-yCy diamond-structured systems",
abstract = "Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCy thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.{\%} were deposited at substrate temperatures of 600-740°C using gas mixtures of SiH4 with C(SiH3)4 or C(SiH2Cl)4, which are (C-H)-free precursors incorporating Si4C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH4 to the gas mixture had a remarkable effect on growth rates and film crystallinity.",
author = "D. Chandrasekhar and J. McMurran and David Smith and John Kouvetakis and Lorentzen, {J. D.} and Jose Menendez",
year = "1998",
doi = "10.1063/1.121294",
language = "English (US)",
volume = "72",
pages = "2117--2119",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Strategies for the synthesis of highly concentrated Si1-yCy diamond-structured systems

AU - Chandrasekhar, D.

AU - McMurran, J.

AU - Smith, David

AU - Kouvetakis, John

AU - Lorentzen, J. D.

AU - Menendez, Jose

PY - 1998

Y1 - 1998

N2 - Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCy thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-740°C using gas mixtures of SiH4 with C(SiH3)4 or C(SiH2Cl)4, which are (C-H)-free precursors incorporating Si4C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH4 to the gas mixture had a remarkable effect on growth rates and film crystallinity.

AB - Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCy thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-740°C using gas mixtures of SiH4 with C(SiH3)4 or C(SiH2Cl)4, which are (C-H)-free precursors incorporating Si4C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH4 to the gas mixture had a remarkable effect on growth rates and film crystallinity.

UR - http://www.scopus.com/inward/record.url?scp=0000049492&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000049492&partnerID=8YFLogxK

U2 - 10.1063/1.121294

DO - 10.1063/1.121294

M3 - Article

AN - SCOPUS:0000049492

VL - 72

SP - 2117

EP - 2119

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -