Stranski-Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

Yeongho Kim, Il Wook Cho, Mee Yi Ryu, Jun Oh Kim, Sang Jun Lee, Keun Yong Ban, Christiana Honsberg

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The optical properties of the Stranski-Krastanov (S-K) grown InAs/GaAsSb quantum dots (QDs) coupled to sub-monolayer (SML) InAs QD stacks are investigated using photoluminescence (PL) spectroscopy. The PL emission peak of the S-K QDs shifts to shorter wavelengths with increasing the number of SML stacks (NSML) due to the increasing strain fields from the SML QDs. The PL peak energy is linearly increased with increasing the cube root of excitation power, with a different ratio of the absorption coefficient to radiative recombination rate for all the QD samples. The total carrier lifetime for the S-K QDs is increased with increasing NSML, most probably caused by the increase in the ground-state transition energy of the S-K QDs. The nonmonotonic behavior of the thermal activation energy of electrons in the S-K QDs is observed due to the NSML-dependent variation of the strain and Coulombic interaction within the QDs.

Original languageEnglish (US)
Article number073103
JournalApplied Physics Letters
Volume111
Issue number7
DOIs
StatePublished - Aug 14 2017

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absorbers
solar cells
quantum dots
photoluminescence
radiative recombination
carrier lifetime
absorptivity
activation energy
optical properties
ground state
energy
shift
wavelengths
spectroscopy
excitation
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Stranski-Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells. / Kim, Yeongho; Cho, Il Wook; Ryu, Mee Yi; Kim, Jun Oh; Lee, Sang Jun; Ban, Keun Yong; Honsberg, Christiana.

In: Applied Physics Letters, Vol. 111, No. 7, 073103, 14.08.2017.

Research output: Contribution to journalArticle

@article{cbff06e1eeb3418ea96f72ebba0f0b8e,
title = "Stranski-Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells",
abstract = "The optical properties of the Stranski-Krastanov (S-K) grown InAs/GaAsSb quantum dots (QDs) coupled to sub-monolayer (SML) InAs QD stacks are investigated using photoluminescence (PL) spectroscopy. The PL emission peak of the S-K QDs shifts to shorter wavelengths with increasing the number of SML stacks (NSML) due to the increasing strain fields from the SML QDs. The PL peak energy is linearly increased with increasing the cube root of excitation power, with a different ratio of the absorption coefficient to radiative recombination rate for all the QD samples. The total carrier lifetime for the S-K QDs is increased with increasing NSML, most probably caused by the increase in the ground-state transition energy of the S-K QDs. The nonmonotonic behavior of the thermal activation energy of electrons in the S-K QDs is observed due to the NSML-dependent variation of the strain and Coulombic interaction within the QDs.",
author = "Yeongho Kim and Cho, {Il Wook} and Ryu, {Mee Yi} and Kim, {Jun Oh} and Lee, {Sang Jun} and Ban, {Keun Yong} and Christiana Honsberg",
year = "2017",
month = "8",
day = "14",
doi = "10.1063/1.4999437",
language = "English (US)",
volume = "111",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Stranski-Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

AU - Kim, Yeongho

AU - Cho, Il Wook

AU - Ryu, Mee Yi

AU - Kim, Jun Oh

AU - Lee, Sang Jun

AU - Ban, Keun Yong

AU - Honsberg, Christiana

PY - 2017/8/14

Y1 - 2017/8/14

N2 - The optical properties of the Stranski-Krastanov (S-K) grown InAs/GaAsSb quantum dots (QDs) coupled to sub-monolayer (SML) InAs QD stacks are investigated using photoluminescence (PL) spectroscopy. The PL emission peak of the S-K QDs shifts to shorter wavelengths with increasing the number of SML stacks (NSML) due to the increasing strain fields from the SML QDs. The PL peak energy is linearly increased with increasing the cube root of excitation power, with a different ratio of the absorption coefficient to radiative recombination rate for all the QD samples. The total carrier lifetime for the S-K QDs is increased with increasing NSML, most probably caused by the increase in the ground-state transition energy of the S-K QDs. The nonmonotonic behavior of the thermal activation energy of electrons in the S-K QDs is observed due to the NSML-dependent variation of the strain and Coulombic interaction within the QDs.

AB - The optical properties of the Stranski-Krastanov (S-K) grown InAs/GaAsSb quantum dots (QDs) coupled to sub-monolayer (SML) InAs QD stacks are investigated using photoluminescence (PL) spectroscopy. The PL emission peak of the S-K QDs shifts to shorter wavelengths with increasing the number of SML stacks (NSML) due to the increasing strain fields from the SML QDs. The PL peak energy is linearly increased with increasing the cube root of excitation power, with a different ratio of the absorption coefficient to radiative recombination rate for all the QD samples. The total carrier lifetime for the S-K QDs is increased with increasing NSML, most probably caused by the increase in the ground-state transition energy of the S-K QDs. The nonmonotonic behavior of the thermal activation energy of electrons in the S-K QDs is observed due to the NSML-dependent variation of the strain and Coulombic interaction within the QDs.

UR - http://www.scopus.com/inward/record.url?scp=85027869586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027869586&partnerID=8YFLogxK

U2 - 10.1063/1.4999437

DO - 10.1063/1.4999437

M3 - Article

AN - SCOPUS:85027869586

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 073103

ER -