Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications

M. J. Rack, Trevor Thornton, D. K. Ferry, J. Huffman, R. Westhoff

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We present results from a strained Si/SiGe quantum well MODFET measured over the temperature range 4.2-0.3 K. The Si/SiGe quantum wells are characterized by magnetotransport measurements and Auger electron spectroscopy. The I-V characteristics of the device are well behaved with no sign of the 'kink-effect' often seen in cryogenic CMOS. The device performance is limited by the resistance of the source and drain contacts. By extracting the parasitic contact resistance, we are able to determine the intrinsic transconductance of the device, which is comparable to values measured in cryogenic CMOS.

Original languageEnglish (US)
Pages (from-to)1199-1203
Number of pages5
JournalSolid-State Electronics
Volume45
Issue number7
DOIs
StatePublished - Jul 1 2001

Keywords

  • Cryogenic circuits
  • Magnetotransport
  • Strained Si/SiGe quantum wells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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