Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications

M. J. Rack, Trevor Thornton, D. K. Ferry, J. Huffman, R. Westhoff

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present results from a strained Si/SiGe quantum well MODFET measured over the temperature range 4.2-0.3 K. The Si/SiGe quantum wells are characterized by magnetotransport measurements and Auger electron spectroscopy. The I-V characteristics of the device are well behaved with no sign of the 'kink-effect' often seen in cryogenic CMOS. The device performance is limited by the resistance of the source and drain contacts. By extracting the parasitic contact resistance, we are able to determine the intrinsic transconductance of the device, which is comparable to values measured in cryogenic CMOS.

Original languageEnglish (US)
Pages (from-to)1199-1203
Number of pages5
JournalSolid-State Electronics
Volume45
Issue number7
DOIs
StatePublished - Jul 2001

Fingerprint

High electron mobility transistors
Cryogenics
Semiconductor quantum wells
cryogenics
quantum wells
Galvanomagnetic effects
Networks (circuits)
CMOS
Transconductance
Auger electron spectroscopy
Contact resistance
transconductance
contact resistance
Auger spectroscopy
electron spectroscopy
Temperature
temperature

Keywords

  • Cryogenic circuits
  • Magnetotransport
  • Strained Si/SiGe quantum wells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications. / Rack, M. J.; Thornton, Trevor; Ferry, D. K.; Huffman, J.; Westhoff, R.

In: Solid-State Electronics, Vol. 45, No. 7, 07.2001, p. 1199-1203.

Research output: Contribution to journalArticle

Rack, M. J. ; Thornton, Trevor ; Ferry, D. K. ; Huffman, J. ; Westhoff, R. / Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications. In: Solid-State Electronics. 2001 ; Vol. 45, No. 7. pp. 1199-1203.
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