Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications

M. J. Rack; Trevor Thornton; D. K. Ferry; J. Huffman; R. Westhoff

doi:10.1016/S0038-1101(01)00198-8

Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications

M. J. Rack, Trevor Thornton, D. K. Ferry, J. Huffman, R. Westhoff

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We present results from a strained Si/SiGe quantum well MODFET measured over the temperature range 4.2-0.3 K. The Si/SiGe quantum wells are characterized by magnetotransport measurements and Auger electron spectroscopy. The I-V characteristics of the device are well behaved with no sign of the 'kink-effect' often seen in cryogenic CMOS. The device performance is limited by the resistance of the source and drain contacts. By extracting the parasitic contact resistance, we are able to determine the intrinsic transconductance of the device, which is comparable to values measured in cryogenic CMOS.

Original language	English (US)
Pages (from-to)	1199-1203
Number of pages	5
Journal	Solid-State Electronics
Volume	45
Issue number	7
DOIs	https://doi.org/10.1016/S0038-1101(01)00198-8
State	Published - Jul 2001

Keywords

Cryogenic circuits
Magnetotransport
Strained Si/SiGe quantum wells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0038-1101(01)00198-8

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title = "Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications",

abstract = "We present results from a strained Si/SiGe quantum well MODFET measured over the temperature range 4.2-0.3 K. The Si/SiGe quantum wells are characterized by magnetotransport measurements and Auger electron spectroscopy. The I-V characteristics of the device are well behaved with no sign of the 'kink-effect' often seen in cryogenic CMOS. The device performance is limited by the resistance of the source and drain contacts. By extracting the parasitic contact resistance, we are able to determine the intrinsic transconductance of the device, which is comparable to values measured in cryogenic CMOS.",

keywords = "Cryogenic circuits, Magnetotransport, Strained Si/SiGe quantum wells",

author = "Rack, {M. J.} and Trevor Thornton and Ferry, {D. K.} and J. Huffman and R. Westhoff",

note = "Funding Information: This work was supported by NASA through the SBIR programme and by the Office of Naval Research. ",

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T1 - Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications

AU - Rack, M. J.

AU - Thornton, Trevor

AU - Ferry, D. K.

AU - Huffman, J.

AU - Westhoff, R.

N1 - Funding Information: This work was supported by NASA through the SBIR programme and by the Office of Naval Research.

PY - 2001/7

Y1 - 2001/7

N2 - We present results from a strained Si/SiGe quantum well MODFET measured over the temperature range 4.2-0.3 K. The Si/SiGe quantum wells are characterized by magnetotransport measurements and Auger electron spectroscopy. The I-V characteristics of the device are well behaved with no sign of the 'kink-effect' often seen in cryogenic CMOS. The device performance is limited by the resistance of the source and drain contacts. By extracting the parasitic contact resistance, we are able to determine the intrinsic transconductance of the device, which is comparable to values measured in cryogenic CMOS.

AB - We present results from a strained Si/SiGe quantum well MODFET measured over the temperature range 4.2-0.3 K. The Si/SiGe quantum wells are characterized by magnetotransport measurements and Auger electron spectroscopy. The I-V characteristics of the device are well behaved with no sign of the 'kink-effect' often seen in cryogenic CMOS. The device performance is limited by the resistance of the source and drain contacts. By extracting the parasitic contact resistance, we are able to determine the intrinsic transconductance of the device, which is comparable to values measured in cryogenic CMOS.

KW - Cryogenic circuits

KW - Magnetotransport

KW - Strained Si/SiGe quantum wells

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JO - Solid-State Electronics

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Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications

Abstract

Keywords

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