Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)

Y. Y. Fang, V. R. D'Costa, J. Tolle, C. D. Poweleit, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Relaxed Ge buffer layers were grown on Si substrates using a recently developed chemical vapor deposition (CVD) approach that combines digermylmethane and digermane precursors. Ultrathin Si films were deposited on these buffer layers at 420 °C by CVD using trisilane as a precursor. The Si films were studied with a variety of experimental techniques, with emphasis on Raman spectroscopy. The analysis of the Raman results shows that a thin (< 1 nm), fully strained Si-Ge alloy layer is formed at the Si-Ge interface. Pure Si grows on this transitional alloy with a strain that approximately follows the predictions from a simple equilibrium strain theory. These results are significant for Ge-based Metal-Oxide-Semiconductor applications that require a thin Si-layer to isolate the Ge channel from the high permittivity oxide.

Original languageEnglish (US)
Pages (from-to)8327-8332
Number of pages6
JournalThin Solid Films
Volume516
Issue number23
DOIs
StatePublished - Oct 1 2008

Fingerprint

Buffer layers
Chemical vapor deposition
vapor deposition
Oxides
Raman spectroscopy
Permittivity
buffers
Metals
Substrates
metal oxide semiconductors
permittivity
oxides
predictions
Oxide semiconductors
Si-Ge alloys

Keywords

  • Chemical vapor deposition
  • Raman spectroscopy
  • strain
  • Trisilane

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100). / Fang, Y. Y.; D'Costa, V. R.; Tolle, J.; Poweleit, C. D.; Kouvetakis, John; Menendez, Jose.

In: Thin Solid Films, Vol. 516, No. 23, 01.10.2008, p. 8327-8332.

Research output: Contribution to journalArticle

Fang, Y. Y. ; D'Costa, V. R. ; Tolle, J. ; Poweleit, C. D. ; Kouvetakis, John ; Menendez, Jose. / Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100). In: Thin Solid Films. 2008 ; Vol. 516, No. 23. pp. 8327-8332.
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