Abstract
Relaxed Ge buffer layers were grown on Si substrates using a recently developed chemical vapor deposition (CVD) approach that combines digermylmethane and digermane precursors. Ultrathin Si films were deposited on these buffer layers at 420 °C by CVD using trisilane as a precursor. The Si films were studied with a variety of experimental techniques, with emphasis on Raman spectroscopy. The analysis of the Raman results shows that a thin (< 1 nm), fully strained Si-Ge alloy layer is formed at the Si-Ge interface. Pure Si grows on this transitional alloy with a strain that approximately follows the predictions from a simple equilibrium strain theory. These results are significant for Ge-based Metal-Oxide-Semiconductor applications that require a thin Si-layer to isolate the Ge channel from the high permittivity oxide.
Original language | English (US) |
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Pages (from-to) | 8327-8332 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 516 |
Issue number | 23 |
DOIs | |
State | Published - Oct 1 2008 |
Keywords
- Chemical vapor deposition
- Raman spectroscopy
- Trisilane
- strain
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry