Strained quantum well valence-band structure and optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors

B. Laikhtman, R. A. Kiehl, D. J. Frank

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

Using the model of an infinite well we have performed detailed calculations of the valence-band structure and for the first time obtained analytic expressions for wave functions in a strained quantum well. In-plane effective masses and energy separations are calculated for different thicknesses of InGaAs wells and In mole fractions in the range of 0 to 0.50. Based on the calculations we estimate the optimal thickness of the well and In mole fraction for which the energy separation between the lowest two subbands has a maximum and the InGaAs layer is stable with respect to misfit dislocations. The results provide useful guidelines for the optimization of strained p-channel field-effect transistors.

Original languageEnglish (US)
Pages (from-to)1531-1538
Number of pages8
JournalJournal of Applied Physics
Volume70
Issue number3
DOIs
StatePublished - Dec 1 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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