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Dive into the research topics of 'Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100–1550 nm range'. Together they form a unique fingerprint.- Sort by
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W. Braun, P. Dowd, C. Z. Guo, S. L. Chen, C. M. Ryu, U. Koelle, Shane Johnson, Yong-Hang Zhang, J. W. Tomm, T. Elsässer, David Smith
Research output: Contribution to journal › Article › peer-review