Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100–1550 nm range

W. Braun, P. Dowd, C. Z. Guo, S. L. Chen, C. M. Ryu, U. Koelle, Shane Johnson, Yong-Hang Zhang, J. W. Tomm, T. Elsässer, David Smith

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We present a novel semiconductor quantum well (QW) structure consisting of alternating (In,Ga)As and Ga(P,As,Sb) layers grown pseudomorphically on a GaAs substrate by all-solid-source molecular beam epitaxy. The band gap of the QW is determined by the thickness and composition of both types of layers and can be varied from 1.1 to 1.55 μm. Calculations show that the observed strong room-temperature photoluminescence in this wavelength range can be explained by a type-II transition in the QW. Structural investigations by reflection high-energy electron diffraction, transmission electron microscopy, and secondary ion mass spectroscopy confirm a triple layer structure with laterally modulated composition. Photoluminescence measurements reveal a linewidth of 50 meV at 1.3 μm and a luminescence decay time of 240 ps. Our investigations demonstrate the feasibility of this materials system for vertical cavity surface-emitting lasers and other optoelectronic devices on GaAs.

Original languageEnglish (US)
Pages (from-to)3004-3014
Number of pages11
JournalJournal of Applied Physics
Volume88
Issue number5
DOIs
StatePublished - Sep 1 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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