Strain relief via trench formation in Ge/Si(100) islands

S. A. Chaparro, Y. Zhang, Jeff Drucker

Research output: Contribution to journalArticle

83 Scopus citations

Abstract

Trenches formed at Ge/Si(100) island bases become an effective strain-relief mechanism at high growth temperatures. Trenches result from diffusion of the most highly strained material to regions of lower strain. The trench depth self-limits, scaling linearly with island diameter. A simple atomistic model of island elasticity indicates that this self-limiting behavior is of kinetic rather than energetic origin.

Original languageEnglish (US)
Pages (from-to)3534-3536
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number24
DOIs
StatePublished - Jun 12 2000
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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