Strain relief via trench formation in Ge/Si(100) islands

S. A. Chaparro; Y. Zhang; Jeff Drucker

doi:10.1063/1.126698

Strain relief via trench formation in Ge/Si(100) islands

S. A. Chaparro, Y. Zhang, Jeff Drucker

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

Trenches formed at Ge/Si(100) island bases become an effective strain-relief mechanism at high growth temperatures. Trenches result from diffusion of the most highly strained material to regions of lower strain. The trench depth self-limits, scaling linearly with island diameter. A simple atomistic model of island elasticity indicates that this self-limiting behavior is of kinetic rather than energetic origin.

Original language	English (US)
Pages (from-to)	3534-3536
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	24
DOIs	https://doi.org/10.1063/1.126698
State	Published - Jun 12 2000
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126698

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@article{6bd21e5a6ac043f2be30dadd9f6224c3,

title = "Strain relief via trench formation in Ge/Si(100) islands",

abstract = "Trenches formed at Ge/Si(100) island bases become an effective strain-relief mechanism at high growth temperatures. Trenches result from diffusion of the most highly strained material to regions of lower strain. The trench depth self-limits, scaling linearly with island diameter. A simple atomistic model of island elasticity indicates that this self-limiting behavior is of kinetic rather than energetic origin.",

author = "Chaparro, {S. A.} and Y. Zhang and Jeff Drucker",

year = "2000",

month = jun,

day = "12",

doi = "10.1063/1.126698",

language = "English (US)",

volume = "76",

pages = "3534--3536",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Strain relief via trench formation in Ge/Si(100) islands

AU - Chaparro, S. A.

AU - Zhang, Y.

AU - Drucker, Jeff

PY - 2000/6/12

Y1 - 2000/6/12

N2 - Trenches formed at Ge/Si(100) island bases become an effective strain-relief mechanism at high growth temperatures. Trenches result from diffusion of the most highly strained material to regions of lower strain. The trench depth self-limits, scaling linearly with island diameter. A simple atomistic model of island elasticity indicates that this self-limiting behavior is of kinetic rather than energetic origin.

AB - Trenches formed at Ge/Si(100) island bases become an effective strain-relief mechanism at high growth temperatures. Trenches result from diffusion of the most highly strained material to regions of lower strain. The trench depth self-limits, scaling linearly with island diameter. A simple atomistic model of island elasticity indicates that this self-limiting behavior is of kinetic rather than energetic origin.

UR - http://www.scopus.com/inward/record.url?scp=0001647890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001647890&partnerID=8YFLogxK

U2 - 10.1063/1.126698

DO - 10.1063/1.126698

M3 - Article

AN - SCOPUS:0001647890

SN - 0003-6951

VL - 76

SP - 3534

EP - 3536

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Strain relief via trench formation in Ge/Si(100) islands

Abstract

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