Strain relaxation mechanisms in InGaN epilayers

R. Liu, J. Mei, Fernando Ponce, Y. Narukawa, H. Omiya, T. Mukai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We find that threading dislocations can play a key role in misfit strain relief in InGaN/GaN heterojunctions. Threading edge dislocations with Burgers vector b=1/3 〈 112̄0 〉 change propagation directions in the strained InGaN layer. The inclination of edge dislocations is in a direction that creates vacancy planes, which accommodate part of the misfit strain. On the other hand, mixed-type dislocations with b=1/3 〈 112̄3 〉 relieve part of the misfit strain by opening up as surface pits. The difference in the relaxation mechanism is attributed to the much different magnitude of the Burgers vector. For b=1/3 〈 112̄3 〉, the dislocation tends to be coreless, especially when under strained conditions.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages215-216
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Liu, R., Mei, J., Ponce, F., Narukawa, Y., Omiya, H., & Mukai, T. (2005). Strain relaxation mechanisms in InGaN epilayers. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 215-216). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994070