Strain of laser annealed silicon surfaces

R. J. Nemanich, D. Haneman

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10 -2-10-3 in all except the polished samples.

Original languageEnglish (US)
Pages (from-to)785-787
Number of pages3
JournalApplied Physics Letters
Volume40
Issue number9
DOIs
StatePublished - Dec 1 1982
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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