Strain of laser annealed silicon surfaces

R. J. Nemanich; D. Haneman

doi:10.1063/1.93259

Strain of laser annealed silicon surfaces

R. J. Nemanich, D. Haneman

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10 ^-2-10^-3 in all except the polished samples.

Original language	English (US)
Pages (from-to)	785-787
Number of pages	3
Journal	Applied Physics Letters
Volume	40
Issue number	9
DOIs	https://doi.org/10.1063/1.93259
State	Published - 1982
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Strain of laser annealed silicon surfaces",

abstract = "High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10 -2-10-3 in all except the polished samples.",

author = "Nemanich, {R. J.} and D. Haneman",

year = "1982",

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AU - Nemanich, R. J.

AU - Haneman, D.

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AB - High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10 -2-10-3 in all except the polished samples.

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U2 - 10.1063/1.93259

DO - 10.1063/1.93259

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Strain of laser annealed silicon surfaces

Abstract

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