Strain measurements of SiGeC heteroepitaxial layers on Si(100) using ion beam analysis

S. Sego; Robert Culbertson; P. Ye; S. Hearne; J. Xiang; N. Herbots; Z. Atzmon; A. E. Bair

Strain measurements of SiGeC heteroepitaxial layers on Si(100) using ion beam analysis

S. Sego, Robert Culbertson, P. Ye, S. Hearne, J. Xiang, N. Herbots, Z. Atzmon, A. E. Bair

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The strain in SiGeC heteroepitaxial films grown on Si(100) substrates has been quantified using ion channeling. The films were grown both by combined ion beam and molecular beam epitaxy (CIMD) and chemical vapor deposition (CVD). Rutherford backscattering spectrometry (RBS) was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the carbon concentration, and ion channeling was utilized to measure film quality. Channeling angular scans across an off normal major axis were used to quantify the strain. Part of the film was removed by using a solution of HF, HNO ₃ and CH ₃COOH in order to obtain a reliable scan in the substrate. The results indicate that C may be compensating for the strain introduced by Ge.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	Dale C. Jacobson, David E. Luzzi, Tony F. Heinz, Masaya Iwaki
Publisher	Materials Research Society
Pages	461-469
Number of pages	9
Volume	354
State	Published - 1995
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: Nov 28 1994 → Dec 2 1994

Other

Other	Proceedings of the 1994 MRS Fall Meeting
City	Boston, MA, USA
Period	11/28/94 → 12/2/94

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Strain measurements of SiGeC heteroepitaxial layers on Si(100) using ion beam analysis. / Sego, S.; Culbertson, Robert; Ye, P. et al.
Materials Research Society Symposium - Proceedings. ed. / Dale C. Jacobson; David E. Luzzi; Tony F. Heinz; Masaya Iwaki. Vol. 354 Materials Research Society, 1995. p. 461-469.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sego, S, Culbertson, R, Ye, P, Hearne, S, Xiang, J, Herbots, N, Atzmon, Z & Bair, AE 1995, Strain measurements of SiGeC heteroepitaxial layers on Si(100) using ion beam analysis. in DC Jacobson, DE Luzzi, TF Heinz & M Iwaki (eds), Materials Research Society Symposium - Proceedings. vol. 354, Materials Research Society, pp. 461-469, Proceedings of the 1994 MRS Fall Meeting, Boston, MA, USA, 11/28/94.

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title = "Strain measurements of SiGeC heteroepitaxial layers on Si(100) using ion beam analysis",

abstract = "The strain in SiGeC heteroepitaxial films grown on Si(100) substrates has been quantified using ion channeling. The films were grown both by combined ion beam and molecular beam epitaxy (CIMD) and chemical vapor deposition (CVD). Rutherford backscattering spectrometry (RBS) was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the carbon concentration, and ion channeling was utilized to measure film quality. Channeling angular scans across an off normal major axis were used to quantify the strain. Part of the film was removed by using a solution of HF, HNO 3 and CH 3COOH in order to obtain a reliable scan in the substrate. The results indicate that C may be compensating for the strain introduced by Ge. ",

author = "S. Sego and Robert Culbertson and P. Ye and S. Hearne and J. Xiang and N. Herbots and Z. Atzmon and Bair, {A. E.}",

year = "1995",

language = "English (US)",

volume = "354",

pages = "461--469",

editor = "Jacobson, {Dale C.} and Luzzi, {David E.} and Heinz, {Tony F.} and Masaya Iwaki",

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publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 02-12-1994",

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T1 - Strain measurements of SiGeC heteroepitaxial layers on Si(100) using ion beam analysis

AU - Sego, S.

AU - Culbertson, Robert

AU - Ye, P.

AU - Hearne, S.

AU - Xiang, J.

AU - Herbots, N.

AU - Atzmon, Z.

AU - Bair, A. E.

PY - 1995

Y1 - 1995

N2 - The strain in SiGeC heteroepitaxial films grown on Si(100) substrates has been quantified using ion channeling. The films were grown both by combined ion beam and molecular beam epitaxy (CIMD) and chemical vapor deposition (CVD). Rutherford backscattering spectrometry (RBS) was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the carbon concentration, and ion channeling was utilized to measure film quality. Channeling angular scans across an off normal major axis were used to quantify the strain. Part of the film was removed by using a solution of HF, HNO 3 and CH 3COOH in order to obtain a reliable scan in the substrate. The results indicate that C may be compensating for the strain introduced by Ge.

AB - The strain in SiGeC heteroepitaxial films grown on Si(100) substrates has been quantified using ion channeling. The films were grown both by combined ion beam and molecular beam epitaxy (CIMD) and chemical vapor deposition (CVD). Rutherford backscattering spectrometry (RBS) was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the carbon concentration, and ion channeling was utilized to measure film quality. Channeling angular scans across an off normal major axis were used to quantify the strain. Part of the film was removed by using a solution of HF, HNO 3 and CH 3COOH in order to obtain a reliable scan in the substrate. The results indicate that C may be compensating for the strain introduced by Ge.

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M3 - Conference contribution

AN - SCOPUS:0029518566

VL - 354

SP - 461

EP - 469

BT - Materials Research Society Symposium - Proceedings

A2 - Jacobson, Dale C.

A2 - Luzzi, David E.

A2 - Heinz, Tony F.

A2 - Iwaki, Masaya

PB - Materials Research Society

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 2 December 1994

ER -

Strain measurements of SiGeC heteroepitaxial layers on Si(100) using ion beam analysis

Abstract

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ASJC Scopus subject areas

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