Strain mapping in nanowires

J. L. Taraci; M. J. Hÿtch; T. Clement; Pedro Peralta; Martha McCartney; Jeffery Drucker; S. T. Picraux

doi:10.1088/0957-4484/16/10/062

Strain mapping in nanowires

J. L. Taraci, M. J. Hÿtch, T. Clement, Pedro Peralta, Martha McCartney, Jeffery Drucker, S. T. Picraux

Research output: Contribution to journal › Article

68 Scopus citations

Abstract

A method for obtaining detailed two-dimensional strain maps in nanowires and related nanoscale structures has been developed. The approach relies on a combination of lattice imaging by high-resolution transmission electron microscopy and geometric phase analysis of the resulting micrographs using Fourier transform routines. We demonstrate the method for a germanium nanowire grown epitaxially on Si(111) by obtaining the strain components ε_xx, ε_yy, ε_xy, the mean dilatation, and the rotation of the lattice planes. The resulting strain maps are demonstrated to allow detailed evaluation of the strains and loading on nanowires.

Original language	English (US)
Pages (from-to)	2365-2371
Number of pages	7
Journal	Nanotechnology
Volume	16
Issue number	10
DOIs	https://doi.org/10.1088/0957-4484/16/10/062
State	Published - Oct 1 2005

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/16/10/062

Fingerprint Dive into the research topics of 'Strain mapping in nanowires'. Together they form a unique fingerprint.

Cite this

@article{3e3b0cc004534b6bb04f655745f53226,

title = "Strain mapping in nanowires",

abstract = "A method for obtaining detailed two-dimensional strain maps in nanowires and related nanoscale structures has been developed. The approach relies on a combination of lattice imaging by high-resolution transmission electron microscopy and geometric phase analysis of the resulting micrographs using Fourier transform routines. We demonstrate the method for a germanium nanowire grown epitaxially on Si(111) by obtaining the strain components εxx, εyy, εxy, the mean dilatation, and the rotation of the lattice planes. The resulting strain maps are demonstrated to allow detailed evaluation of the strains and loading on nanowires.",

author = "Taraci, {J. L.} and H{\"y}tch, {M. J.} and T. Clement and Pedro Peralta and Martha McCartney and Jeffery Drucker and Picraux, {S. T.}",

year = "2005",

month = oct,

day = "1",

doi = "10.1088/0957-4484/16/10/062",

language = "English (US)",

volume = "16",

pages = "2365--2371",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "10",

}

TY - JOUR

T1 - Strain mapping in nanowires

AU - Taraci, J. L.

AU - Hÿtch, M. J.

AU - Clement, T.

AU - Peralta, Pedro

AU - McCartney, Martha

AU - Drucker, Jeffery

AU - Picraux, S. T.

PY - 2005/10/1

Y1 - 2005/10/1

N2 - A method for obtaining detailed two-dimensional strain maps in nanowires and related nanoscale structures has been developed. The approach relies on a combination of lattice imaging by high-resolution transmission electron microscopy and geometric phase analysis of the resulting micrographs using Fourier transform routines. We demonstrate the method for a germanium nanowire grown epitaxially on Si(111) by obtaining the strain components εxx, εyy, εxy, the mean dilatation, and the rotation of the lattice planes. The resulting strain maps are demonstrated to allow detailed evaluation of the strains and loading on nanowires.

AB - A method for obtaining detailed two-dimensional strain maps in nanowires and related nanoscale structures has been developed. The approach relies on a combination of lattice imaging by high-resolution transmission electron microscopy and geometric phase analysis of the resulting micrographs using Fourier transform routines. We demonstrate the method for a germanium nanowire grown epitaxially on Si(111) by obtaining the strain components εxx, εyy, εxy, the mean dilatation, and the rotation of the lattice planes. The resulting strain maps are demonstrated to allow detailed evaluation of the strains and loading on nanowires.

UR - http://www.scopus.com/inward/record.url?scp=25444530634&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25444530634&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/16/10/062

DO - 10.1088/0957-4484/16/10/062

M3 - Article

C2 - 20818019

AN - SCOPUS:25444530634

VL - 16

SP - 2365

EP - 2371

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 10

ER -