Abstract
A method for obtaining detailed two-dimensional strain maps in nanowires and related nanoscale structures has been developed. The approach relies on a combination of lattice imaging by high-resolution transmission electron microscopy and geometric phase analysis of the resulting micrographs using Fourier transform routines. We demonstrate the method for a germanium nanowire grown epitaxially on Si(111) by obtaining the strain components εxx, εyy, εxy, the mean dilatation, and the rotation of the lattice planes. The resulting strain maps are demonstrated to allow detailed evaluation of the strains and loading on nanowires.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2365-2371 |
| Number of pages | 7 |
| Journal | Nanotechnology |
| Volume | 16 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 1 2005 |
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ASJC Scopus subject areas
- Engineering (miscellaneous)
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
Cite this
Strain mapping in nanowires. / Taraci, J. L.; Hÿtch, M. J.; Clement, T.; Peralta, Pedro; McCartney, Martha; Drucker, Jeffery; Picraux, S. T.
In: Nanotechnology, Vol. 16, No. 10, 01.10.2005, p. 2365-2371.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Strain mapping in nanowires
AU - Taraci, J. L.
AU - Hÿtch, M. J.
AU - Clement, T.
AU - Peralta, Pedro
AU - McCartney, Martha
AU - Drucker, Jeffery
AU - Picraux, S. T.
PY - 2005/10/1
Y1 - 2005/10/1
N2 - A method for obtaining detailed two-dimensional strain maps in nanowires and related nanoscale structures has been developed. The approach relies on a combination of lattice imaging by high-resolution transmission electron microscopy and geometric phase analysis of the resulting micrographs using Fourier transform routines. We demonstrate the method for a germanium nanowire grown epitaxially on Si(111) by obtaining the strain components εxx, εyy, εxy, the mean dilatation, and the rotation of the lattice planes. The resulting strain maps are demonstrated to allow detailed evaluation of the strains and loading on nanowires.
AB - A method for obtaining detailed two-dimensional strain maps in nanowires and related nanoscale structures has been developed. The approach relies on a combination of lattice imaging by high-resolution transmission electron microscopy and geometric phase analysis of the resulting micrographs using Fourier transform routines. We demonstrate the method for a germanium nanowire grown epitaxially on Si(111) by obtaining the strain components εxx, εyy, εxy, the mean dilatation, and the rotation of the lattice planes. The resulting strain maps are demonstrated to allow detailed evaluation of the strains and loading on nanowires.
UR - http://www.scopus.com/inward/record.url?scp=25444530634&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=25444530634&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/16/10/062
DO - 10.1088/0957-4484/16/10/062
M3 - Article
C2 - 20818019
AN - SCOPUS:25444530634
VL - 16
SP - 2365
EP - 2371
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 10
ER -