Strain mapping in nanowires

J. L. Taraci, M. J. Hÿtch, T. Clement, Pedro Peralta, Martha McCartney, Jeffery Drucker, S. T. Picraux

Research output: Contribution to journalArticle

68 Scopus citations

Abstract

A method for obtaining detailed two-dimensional strain maps in nanowires and related nanoscale structures has been developed. The approach relies on a combination of lattice imaging by high-resolution transmission electron microscopy and geometric phase analysis of the resulting micrographs using Fourier transform routines. We demonstrate the method for a germanium nanowire grown epitaxially on Si(111) by obtaining the strain components εxx, εyy, εxy, the mean dilatation, and the rotation of the lattice planes. The resulting strain maps are demonstrated to allow detailed evaluation of the strains and loading on nanowires.

Original languageEnglish (US)
Pages (from-to)2365-2371
Number of pages7
JournalNanotechnology
Volume16
Issue number10
DOIs
StatePublished - Oct 1 2005

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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