Strain Induced Indirect-Direct Bandgap Transition in Bilayer MoTe2

Yueyang Yu, C. Z. Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We experimentally demonstrate an indirect to direct bandgap transition on bilayer MoTe2 by strain engineering. By applying 0.58% tensile strain, photoluminescence intensity is increased by 2.22 times, and linewidth is reduced by 36%.

Original languageEnglish (US)
Title of host publication2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580767
StatePublished - May 2020
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States
Duration: May 10 2020May 15 2020

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2020-May
ISSN (Print)1092-8081

Conference

Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/TerritoryUnited States
CitySan Jose
Period5/10/205/15/20

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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