TY - GEN
T1 - Strain induced indirect-direct bandgap transition in bilayer MoTe2
AU - Yu, Yueyang
AU - Ning, C. Z.
N1 - Publisher Copyright:
© OSA 2020 © 2020 The Author(s)
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020
Y1 - 2020
N2 - We experimentally demonstrate an indirect to direct bandgap transition on bilayer MoTe2 by strain engineering. By applying 0.58% tensile strain, photoluminescence intensity is increased by 2.22 times, and linewidth is reduced by 36%.
AB - We experimentally demonstrate an indirect to direct bandgap transition on bilayer MoTe2 by strain engineering. By applying 0.58% tensile strain, photoluminescence intensity is increased by 2.22 times, and linewidth is reduced by 36%.
UR - http://www.scopus.com/inward/record.url?scp=85095407073&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85095407073&partnerID=8YFLogxK
U2 - 10.1364/CLEO_SI.2020.SM1Q.2
DO - 10.1364/CLEO_SI.2020.SM1Q.2
M3 - Conference contribution
AN - SCOPUS:85095407073
T3 - Optics InfoBase Conference Papers
BT - CLEO
PB - OSA - The Optical Society
T2 - CLEO: Science and Innovations, CLEO_SI 2020
Y2 - 10 May 2020 through 15 May 2020
ER -